Advanced semiconductor characterization with aberration corrected electron microscopes

J. L. Rouvière, E. Prestat, P. Bayle-Guillemaud, M. Den Hertog, C. Bougerol, D. Cooper, J. Zuo

Research output: Contribution to journalConference article

Abstract

Spherical aberration (Cs) correctors were demonstrated in the last years of the twentieth century and became commercially available a few years later. In Grenoble, we received our first probe corrector on a TEM/STEM machine in 2006. Cs-correctors have allowed us to improve the spatial resolution and the contrast of high resolution images both in TEM and STEM. The aim of the article is not to give a detailed description of Cs-correctors or a thorough analysis of their pros and cons but to illustrate what the benefits of the Cs-correctors have been in four areas: (i) atomic structure determination, (ii) polarity measurement, (iii) strain determination and (iv) interface analysis. Emphasis is put on the probe corrector although some comments on image correctors are given as well.

Original languageEnglish (US)
Article number012001
JournalJournal of Physics: Conference Series
Volume471
Issue number1
DOIs
StatePublished - Jan 1 2013
Event18th Microscopy of Semiconducting Materials Conference, MSM 2013 - Oxford, United Kingdom
Duration: Apr 7 2013Apr 11 2013

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aberration
electron microscopes
transmission electron microscopy
probes
strain measurement
atomic structure
polarity
spatial resolution
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Rouvière, J. L., Prestat, E., Bayle-Guillemaud, P., Den Hertog, M., Bougerol, C., Cooper, D., & Zuo, J. (2013). Advanced semiconductor characterization with aberration corrected electron microscopes. Journal of Physics: Conference Series, 471(1), [012001]. https://doi.org/10.1088/1742-6596/471/1/012001

Advanced semiconductor characterization with aberration corrected electron microscopes. / Rouvière, J. L.; Prestat, E.; Bayle-Guillemaud, P.; Den Hertog, M.; Bougerol, C.; Cooper, D.; Zuo, J.

In: Journal of Physics: Conference Series, Vol. 471, No. 1, 012001, 01.01.2013.

Research output: Contribution to journalConference article

Rouvière, JL, Prestat, E, Bayle-Guillemaud, P, Den Hertog, M, Bougerol, C, Cooper, D & Zuo, J 2013, 'Advanced semiconductor characterization with aberration corrected electron microscopes', Journal of Physics: Conference Series, vol. 471, no. 1, 012001. https://doi.org/10.1088/1742-6596/471/1/012001
Rouvière JL, Prestat E, Bayle-Guillemaud P, Den Hertog M, Bougerol C, Cooper D et al. Advanced semiconductor characterization with aberration corrected electron microscopes. Journal of Physics: Conference Series. 2013 Jan 1;471(1). 012001. https://doi.org/10.1088/1742-6596/471/1/012001
Rouvière, J. L. ; Prestat, E. ; Bayle-Guillemaud, P. ; Den Hertog, M. ; Bougerol, C. ; Cooper, D. ; Zuo, J. / Advanced semiconductor characterization with aberration corrected electron microscopes. In: Journal of Physics: Conference Series. 2013 ; Vol. 471, No. 1.
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