Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT

Huiming Xu; Barry Wu; Ardy Winoto; Milton Feng

doi:10.1109/CSICS.2014.6978537

Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT

Huiming Xu, Barry Wu, Ardy Winoto, Milton Feng

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An AlInP emitter ledge (EL) has been developed for a Type-II GaAsSb/InP DHBT with doping-graded base. The AlInP emitter ledge has effectively reduced emitter peripheral surface recombination current, thus improving current gain. A 0.25 x 5 μm²; device has demonstrated maximum current gain β = 24, BVCEO = 6.3 V and f_T/f_MAX = 480/620 GHz. RF performances of 600+ GHz Type II DHBTs with and without emitter ledge have also been compared.

Original language	English (US)
Title of host publication	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479936229
DOIs	https://doi.org/10.1109/CSICS.2014.6978537
State	Published - Dec 5 2014
Event	36th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2014 - San Diego, United States Duration: Oct 19 2014 → Oct 22 2014

Publication series

Name	Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)	1550-8781

Other

Other	36th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2014
Country	United States
City	San Diego
Period	10/19/14 → 10/22/14

Keywords

DHBT
Doping graded
GaAsSb
InP
Ledge
Surface recombination
THz transistor

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CSICS.2014.6978537

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Cite this

Xu, H., Wu, B., Winoto, A., & Feng, M. (2014). Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT. In Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC [6978537] (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2014.6978537

Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT. / Xu, Huiming; Wu, Barry; Winoto, Ardy; Feng, Milton.

Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. Institute of Electrical and Electronics Engineers Inc., 2014. 6978537 (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xu, H, Wu, B, Winoto, A & Feng, M 2014, Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT. in Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC., 6978537, Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC, Institute of Electrical and Electronics Engineers Inc., 36th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2014, San Diego, United States, 10/19/14. https://doi.org/10.1109/CSICS.2014.6978537

Xu H, Wu B, Winoto A, Feng M. Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT. In Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. Institute of Electrical and Electronics Engineers Inc. 2014. 6978537. (Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC). https://doi.org/10.1109/CSICS.2014.6978537

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abstract = "An AlInP emitter ledge (EL) has been developed for a Type-II GaAsSb/InP DHBT with doping-graded base. The AlInP emitter ledge has effectively reduced emitter peripheral surface recombination current, thus improving current gain. A 0.25 x 5 μm2; device has demonstrated maximum current gain β = 24, BVCEO = 6.3 V and fT/fMAX = 480/620 GHz. RF performances of 600+ GHz Type II DHBTs with and without emitter ledge have also been compared.",

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