@inproceedings{74b8589a9eee4b25a70204fcb8b7ed33,
title = "Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT",
abstract = "An AlInP emitter ledge (EL) has been developed for a Type-II GaAsSb/InP DHBT with doping-graded base. The AlInP emitter ledge has effectively reduced emitter peripheral surface recombination current, thus improving current gain. A 0.25 x 5 μm2; device has demonstrated maximum current gain β = 24, BVCEO = 6.3 V and fT/fMAX = 480/620 GHz. RF performances of 600+ GHz Type II DHBTs with and without emitter ledge have also been compared.",
keywords = "DHBT, Doping graded, GaAsSb, InP, Ledge, Surface recombination, THz transistor",
author = "Huiming Xu and Barry Wu and Ardy Winoto and Milton Feng",
year = "2014",
month = dec,
day = "5",
doi = "10.1109/CSICS.2014.6978537",
language = "English (US)",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
address = "United States",
note = "36th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2014 ; Conference date: 19-10-2014 Through 22-10-2014",
}