Advanced process and modeling on 600+ GHz emitter ledge type-II GaAsSb/InP DHBT

Huiming Xu, Barry Wu, Ardy Winoto, Milton Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An AlInP emitter ledge (EL) has been developed for a Type-II GaAsSb/InP DHBT with doping-graded base. The AlInP emitter ledge has effectively reduced emitter peripheral surface recombination current, thus improving current gain. A 0.25 x 5 μm2; device has demonstrated maximum current gain β = 24, BVCEO = 6.3 V and fT/fMAX = 480/620 GHz. RF performances of 600+ GHz Type II DHBTs with and without emitter ledge have also been compared.

Original languageEnglish (US)
Title of host publicationTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479936229
DOIs
StatePublished - Dec 5 2014
Event36th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2014 - San Diego, United States
Duration: Oct 19 2014Oct 22 2014

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Other

Other36th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2014
CountryUnited States
CitySan Diego
Period10/19/1410/22/14

Keywords

  • DHBT
  • Doping graded
  • GaAsSb
  • InP
  • Ledge
  • Surface recombination
  • THz transistor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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