Advanced methods for silicon device modeling

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The sustained development of digital electronics has driven for many years the advances of silicon device simulation. However, fundamental simulation issues that must be addressed in modern digital devices are also quite relevant for high frequency applications. Quantum effects must be considered in the simulation of aggressively scaled structures, while thermal effects are particular relevant for power applications. Conventional simulation approaches based on the standard semiconductor equations, although computationally efficient, do not always provide a sufficiently predictive model. More advanced physical approaches rely on an extended Boltzmann equation model that can include explicitly the detailed band structure, nonlinear transport effects, quantum corrections and a selfconsistent treatment for self-heating and phonon transport. Such complicated physical models are more easily implemented in particle Monte Carlo simulation.

Original languageEnglish (US)
Title of host publication2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages168-171
Number of pages4
DOIs
StatePublished - Apr 23 2010
Event2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States
Duration: Jan 11 2010Jan 13 2010

Publication series

Name2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Other

Other2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
CountryUnited States
CityNew Orleans, LA
Period1/11/101/13/10

Keywords

  • Band structure
  • Monte Carlo simulation
  • Non-linear transport
  • Quantum effects
  • Self-heating

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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