Adsorption of TiCl4, SiH4, and HCl on Si(100): Application to TiSi2 Chemical Vapor Deposition and Si Etching

M. A. Mendicino, E. G. Seebauer

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The interactions of TiCl4, SiH4, and HCl with Si(100) have been investigated by temperature programmed desorption (TPD) with the goal of better understanding the initial stages of TiSi2 chemical vapor deposition for circuit metallization and wafer etching with HC1/H2. Coadsorption experiments with TiCl4 and SiH4 show that under most conditions H2 and SiCl2 are the main desorption products, with Ti being left behind on the surface, HCl is a minor product. However, at sufficiently low exposures of either TiCl4 or SiH4, the desorption of SiCl2 or H2, respectively, is inhibited in favor of HCL A kinetic model involving formation of an HCl complex at defects has been formulated which explains the results quantitatively. HCl adsorption gives rise to the principal desorption products SiCl2 and H2) with HCl as a minor product. The kinetic behavior can also be explained quantitatively with the proposed model. Implications for TiSi2 growth are discussed with reference to possible growth temperatures and source gas pressures. The mechanism for etching by HCl is further elucidated.

Original languageEnglish (US)
Pages (from-to)1786-1793
Number of pages8
JournalJournal of the Electrochemical Society
Issue number6
StatePublished - Jun 1993

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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