Adsorption of TiCl4 on Si(100)

M. A. Mendicino; E. G. Seebauer

doi:10.1016/0039-6028(92)90614-C

Adsorption of TiCl₄ on Si(100)

M. A. Mendicino, E. G. Seebauer

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Adsorption of TiCl₄ on Si(100) has been examined with temperature programmed desorption (TPD) and low-energy electron diffraction (LEED). At low coverage, TiCl₄ reacts to yield exclusively SiQ₂, which desorbs according to second-order kinetics near 950 K. The activation energy for desorption E_D is 73 ± 4 kcal/mol, and the pre-exponential factor n₀v₀ is 4 × 10^{16 ± 1} s^-1. At higher coverages, this state saturates, and desorption as TiCl₄ takes place near 500 K. The kinetic parameters of the 500 K peak appear to have only phenomenological significance and point to a complex reaction network for associative recombination. At very high exposures, TiCl₄ desorbs from a weakly bound state near 170 K. The significance of these results for the chemical vapor deposition of TiSi₂ and TiN is discussed. In particular chlorine-free material may be difficult to grow below ∼ 950 K.

Original language	English (US)
Pages (from-to)	89-96
Number of pages	8
Journal	Surface Science
Volume	277
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(92)90614-C
State	Published - Oct 10 1992

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Online availability

10.1016/0039-6028(92)90614-C

Library availability

Discover UIUC Full Text

Cite this

@article{e81096485022445e8d7314d31fdab90d,

title = "Adsorption of TiCl4 on Si(100)",

abstract = "Adsorption of TiCl4 on Si(100) has been examined with temperature programmed desorption (TPD) and low-energy electron diffraction (LEED). At low coverage, TiCl4 reacts to yield exclusively SiQ2, which desorbs according to second-order kinetics near 950 K. The activation energy for desorption ED is 73 ± 4 kcal/mol, and the pre-exponential factor n0v0 is 4 × 1016 ± 1 s-1. At higher coverages, this state saturates, and desorption as TiCl4 takes place near 500 K. The kinetic parameters of the 500 K peak appear to have only phenomenological significance and point to a complex reaction network for associative recombination. At very high exposures, TiCl4 desorbs from a weakly bound state near 170 K. The significance of these results for the chemical vapor deposition of TiSi2 and TiN is discussed. In particular chlorine-free material may be difficult to grow below ∼ 950 K.",

author = "Mendicino, {M. A.} and Seebauer, {E. G.}",

note = "Funding Information: This research was supported by a National Science Foundation Presidential Young Investigator Award No. CI{\textquoteright}S 88-57037a nd by the Semiconductor ResearchC orporation under Contract No. 90-SJ-190.",

year = "1992",

month = oct,

day = "10",

doi = "10.1016/0039-6028(92)90614-C",

language = "English (US)",

volume = "277",

pages = "89--96",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Adsorption of TiCl4 on Si(100)

AU - Mendicino, M. A.

AU - Seebauer, E. G.

N1 - Funding Information: This research was supported by a National Science Foundation Presidential Young Investigator Award No. CI’S 88-57037a nd by the Semiconductor ResearchC orporation under Contract No. 90-SJ-190.

PY - 1992/10/10

Y1 - 1992/10/10

N2 - Adsorption of TiCl4 on Si(100) has been examined with temperature programmed desorption (TPD) and low-energy electron diffraction (LEED). At low coverage, TiCl4 reacts to yield exclusively SiQ2, which desorbs according to second-order kinetics near 950 K. The activation energy for desorption ED is 73 ± 4 kcal/mol, and the pre-exponential factor n0v0 is 4 × 1016 ± 1 s-1. At higher coverages, this state saturates, and desorption as TiCl4 takes place near 500 K. The kinetic parameters of the 500 K peak appear to have only phenomenological significance and point to a complex reaction network for associative recombination. At very high exposures, TiCl4 desorbs from a weakly bound state near 170 K. The significance of these results for the chemical vapor deposition of TiSi2 and TiN is discussed. In particular chlorine-free material may be difficult to grow below ∼ 950 K.

AB - Adsorption of TiCl4 on Si(100) has been examined with temperature programmed desorption (TPD) and low-energy electron diffraction (LEED). At low coverage, TiCl4 reacts to yield exclusively SiQ2, which desorbs according to second-order kinetics near 950 K. The activation energy for desorption ED is 73 ± 4 kcal/mol, and the pre-exponential factor n0v0 is 4 × 1016 ± 1 s-1. At higher coverages, this state saturates, and desorption as TiCl4 takes place near 500 K. The kinetic parameters of the 500 K peak appear to have only phenomenological significance and point to a complex reaction network for associative recombination. At very high exposures, TiCl4 desorbs from a weakly bound state near 170 K. The significance of these results for the chemical vapor deposition of TiSi2 and TiN is discussed. In particular chlorine-free material may be difficult to grow below ∼ 950 K.

UR - http://www.scopus.com/inward/record.url?scp=0026929406&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026929406&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(92)90614-C

DO - 10.1016/0039-6028(92)90614-C

M3 - Article

AN - SCOPUS:0026929406

SN - 0039-6028

VL - 277

SP - 89

EP - 96

JO - Surface Science

JF - Surface Science

IS - 1-2

ER -