Adsorption of TiCl4 on Si(100)

M. A. Mendicino, E. G. Seebauer

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Adsorption of TiCl4 on Si(100) has been examined with temperature programmed desorption (TPD) and low-energy electron diffraction (LEED). At low coverage, TiCl4 reacts to yield exclusively SiQ2, which desorbs according to second-order kinetics near 950 K. The activation energy for desorption ED is 73 ± 4 kcal/mol, and the pre-exponential factor n0v0 is 4 × 1016 ± 1 s-1. At higher coverages, this state saturates, and desorption as TiCl4 takes place near 500 K. The kinetic parameters of the 500 K peak appear to have only phenomenological significance and point to a complex reaction network for associative recombination. At very high exposures, TiCl4 desorbs from a weakly bound state near 170 K. The significance of these results for the chemical vapor deposition of TiSi2 and TiN is discussed. In particular chlorine-free material may be difficult to grow below ∼ 950 K.

Original languageEnglish (US)
Pages (from-to)89-96
Number of pages8
JournalSurface Science
Issue number1-2
StatePublished - Oct 10 1992

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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