Adsorption of chlorine on Si(100)

M. A. Mendicino, E. G. Seebauer

Research output: Contribution to journalArticlepeer-review

Abstract

The adsorption of Cl2 on Si(100) has been examined by temperature-programmed desorption and low-energy electron diffraction. The results reconcile disagreement in the literature about whether SiCl2 or SiCl4 desorbs at 950 K from Si surfaces in response to Cl-containing gases. Either product can be obtained, depending on the history of the ultra-high vacuum chamber. SiCl4 desorption is a spurious effect that arises from the presence of gaseous FeCl3, which forms in the chamber after large Cl2 exposures. SiCl2 is the true product, desorbing by second-order kinetics with an activation energy of 73 ∓ 4 kcal/mol and a pre-exponential factor n0v0 = 4×1016∓1 s-1. For large Cl2 exposures, the surface is etched through SiCl4 desorption at 500 K, and at 115 and 150 K in the presence of Cl2 multilayers.

Original languageEnglish (US)
Pages (from-to)285-290
Number of pages6
JournalApplied Surface Science
Volume68
Issue number3
DOIs
StatePublished - Jul 1993

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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