Adaptive resistive device and methods thereof

Eric Pop (Inventor), Feng Xiong (Inventor), Albert D Liao (Inventor)

Research output: Patent

Abstract

A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.
Original languageEnglish (US)
U.S. patent number9324422
StatePublished - Apr 26 2016

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