Adaptive resistive device and methods thereof

Eric Pop; Feng Xiong; Albert D Liao

Adaptive resistive device and methods thereof

Eric Pop (Inventor), Feng Xiong (Inventor), Albert D Liao (Inventor)

Research output: Patent

Abstract

A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.

Original language	English (US)
U.S. patent number	9324422
Filing date	4/18/12
State	Published - Apr 26 2016

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title = "Adaptive resistive device and methods thereof",

abstract = "A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.",

author = "Eric Pop and Feng Xiong and Liao, {Albert D}",

note = "STATEMENT AS TO FEDERALLY SPONSORED RESEARCH This invention was made with government support under contract number N00014-09-0180 and N00014-10-1-0853 awarded by Office of Navy Research. The government has certain rights in the invention.; 9324422",

year = "2016",

month = apr,

day = "26",

language = "English (US)",

type = "Patent",

}

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T1 - Adaptive resistive device and methods thereof

AU - Pop, Eric

AU - Xiong, Feng

AU - Liao, Albert D

N1 - STATEMENT AS TO FEDERALLY SPONSORED RESEARCH This invention was made with government support under contract number N00014-09-0180 and N00014-10-1-0853 awarded by Office of Navy Research. The government has certain rights in the invention.

PY - 2016/4/26

Y1 - 2016/4/26

N2 - A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.

AB - A system that incorporates teachings of the subject disclosure may include, for example, a device including a nanoelectrode having a gap, and a resistive change material located in the gap, wherein an application of a voltage potential across first and second terminals of the nanoelectrode causes the resistive change material to modify at least one non-volatile memory state of the resistive change material. Additional embodiments are disclosed.

M3 - Patent

M1 - 9324422

Y2 - 2012/04/18

ER -

Adaptive resistive device and methods thereof

Abstract

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