Active hot spot cooling of GaN transistors with electric field enhanced jumping droplet condensation

Thomas Foulkes, Junho Oh, Patrick Birbarah, Jason Neely, Nenad Miljkovic, Robert Carl Nikolai Pilawa Podgurski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Mitigating heat generated by hot spots inside of power electronic devices is a formidable obstacle to further increases in power density. This paper presents the first demonstration of active cooling for hot spots via jumping droplet condensation. This newly discovered phase change cooling mechanism comprises 10 to 100 μm sized droplets leaping from a cold superhydrophobic surface onto a hot GaN transistor and efficiently transferring heat via evaporation. After discussing how electric fields can enhance this process, observations from cooling GaN transistors with this method are outlined. Experimental measurements demonstrate increased cooling rates and steerable heat transfer through the application of electric fields.

Original languageEnglish (US)
Title of host publication2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages912-918
Number of pages7
ISBN (Electronic)9781509053667
DOIs
StatePublished - May 17 2017
Event32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017 - Tampa, United States
Duration: Mar 26 2017Mar 30 2017

Publication series

NameConference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Other

Other32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017
CountryUnited States
CityTampa
Period3/26/173/30/17

Fingerprint

Condensation
Transistors
Electric fields
Cooling
Power electronics
Evaporation
Demonstrations
Heat transfer
Hot Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Foulkes, T., Oh, J., Birbarah, P., Neely, J., Miljkovic, N., & Pilawa Podgurski, R. C. N. (2017). Active hot spot cooling of GaN transistors with electric field enhanced jumping droplet condensation. In 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017 (pp. 912-918). [7930805] (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/APEC.2017.7930805

Active hot spot cooling of GaN transistors with electric field enhanced jumping droplet condensation. / Foulkes, Thomas; Oh, Junho; Birbarah, Patrick; Neely, Jason; Miljkovic, Nenad; Pilawa Podgurski, Robert Carl Nikolai.

2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 912-918 7930805 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Foulkes, T, Oh, J, Birbarah, P, Neely, J, Miljkovic, N & Pilawa Podgurski, RCN 2017, Active hot spot cooling of GaN transistors with electric field enhanced jumping droplet condensation. in 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017., 7930805, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, Institute of Electrical and Electronics Engineers Inc., pp. 912-918, 32nd Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2017, Tampa, United States, 3/26/17. https://doi.org/10.1109/APEC.2017.7930805
Foulkes T, Oh J, Birbarah P, Neely J, Miljkovic N, Pilawa Podgurski RCN. Active hot spot cooling of GaN transistors with electric field enhanced jumping droplet condensation. In 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 912-918. 7930805. (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC). https://doi.org/10.1109/APEC.2017.7930805
Foulkes, Thomas ; Oh, Junho ; Birbarah, Patrick ; Neely, Jason ; Miljkovic, Nenad ; Pilawa Podgurski, Robert Carl Nikolai. / Active hot spot cooling of GaN transistors with electric field enhanced jumping droplet condensation. 2017 IEEE Applied Power Electronics Conference and Exposition, APEC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 912-918 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC).
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