Activation of silicon ion-implanted gallium nitride by furnace annealing

R. D. Dupuis, C. J. Eiting, P. A. Grudowski, H. Hsia, Z. Tang, D. Becher, H. Kuo, G. E. Stillman, M. Feng

Research output: Contribution to journalConference articlepeer-review


Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

Original languageEnglish (US)
Pages (from-to)319-324
Number of pages6
JournalJournal of Electronic Materials
Issue number3
StatePublished - Mar 1999
EventProceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA
Duration: Jun 24 1998Jun 26 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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