Activation of silicon ion-implanted gallium nitride by furnace annealing

R. D. Dupuis, C. J. Eiting, P. A. Grudowski, H. Hsia, Z. Tang, D. Becher, H. Kuo, G. E. Stillman, M. Feng

Research output: Contribution to journalConference article

Abstract

Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

Original languageEnglish (US)
Pages (from-to)319-324
Number of pages6
JournalJournal of Electronic Materials
Volume28
Issue number3
DOIs
StatePublished - Mar 1999
EventProceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA
Duration: Jun 24 1998Jun 26 1998

Fingerprint

Gallium nitride
gallium nitrides
Silicon
furnaces
Furnaces
Aluminum Oxide
Chemical activation
activation
Annealing
Ions
Sapphire
annealing
Surface morphology
sapphire
silicon
ions
microwave circuits
Ionization potential
Monolithic microwave integrated circuits
Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Dupuis, R. D., Eiting, C. J., Grudowski, P. A., Hsia, H., Tang, Z., Becher, D., ... Feng, M. (1999). Activation of silicon ion-implanted gallium nitride by furnace annealing. Journal of Electronic Materials, 28(3), 319-324. https://doi.org/10.1007/s11664-999-0034-x

Activation of silicon ion-implanted gallium nitride by furnace annealing. / Dupuis, R. D.; Eiting, C. J.; Grudowski, P. A.; Hsia, H.; Tang, Z.; Becher, D.; Kuo, H.; Stillman, G. E.; Feng, M.

In: Journal of Electronic Materials, Vol. 28, No. 3, 03.1999, p. 319-324.

Research output: Contribution to journalConference article

Dupuis, RD, Eiting, CJ, Grudowski, PA, Hsia, H, Tang, Z, Becher, D, Kuo, H, Stillman, GE & Feng, M 1999, 'Activation of silicon ion-implanted gallium nitride by furnace annealing', Journal of Electronic Materials, vol. 28, no. 3, pp. 319-324. https://doi.org/10.1007/s11664-999-0034-x
Dupuis RD, Eiting CJ, Grudowski PA, Hsia H, Tang Z, Becher D et al. Activation of silicon ion-implanted gallium nitride by furnace annealing. Journal of Electronic Materials. 1999 Mar;28(3):319-324. https://doi.org/10.1007/s11664-999-0034-x
Dupuis, R. D. ; Eiting, C. J. ; Grudowski, P. A. ; Hsia, H. ; Tang, Z. ; Becher, D. ; Kuo, H. ; Stillman, G. E. ; Feng, M. / Activation of silicon ion-implanted gallium nitride by furnace annealing. In: Journal of Electronic Materials. 1999 ; Vol. 28, No. 3. pp. 319-324.
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AU - Dupuis, R. D.

AU - Eiting, C. J.

AU - Grudowski, P. A.

AU - Hsia, H.

AU - Tang, Z.

AU - Becher, D.

AU - Kuo, H.

AU - Stillman, G. E.

AU - Feng, M.

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N2 - Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

AB - Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

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