Activation of silicon ion-implanted gallium nitride by furnace annealing

R. D. Dupuis; C. J. Eiting; P. A. Grudowski; H. Hsia; Z. Tang; D. Becher; H. Kuo; G. E. Stillman; M. Feng

doi:10.1007/s11664-999-0034-x

Activation of silicon ion-implanted gallium nitride by furnace annealing

R. D. Dupuis, C. J. Eiting, P. A. Grudowski, H. Hsia, Z. Tang, D. Becher, H. Kuo, G. E. Stillman, M. Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (n_atoms = 5×10¹⁴ cm^-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N₂ for 5 min exhibited a smooth surface morphology and a sheet electron concentration n_s to approximately 9.0×10¹³ cm^-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

Original language	English (US)
Pages (from-to)	319-324
Number of pages	6
Journal	Journal of Electronic Materials
Volume	28
Issue number	3
DOIs	https://doi.org/10.1007/s11664-999-0034-x
State	Published - Mar 1999
Event	Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 - Charlottesville, VA, USA Duration: Jun 24 1998 → Jun 26 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-999-0034-x

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@article{79b29edc1ca2483ba603449329639925,

title = "Activation of silicon ion-implanted gallium nitride by furnace annealing",

abstract = "Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.",

author = "Dupuis, {R. D.} and Eiting, {C. J.} and Grudowski, {P. A.} and H. Hsia and Z. Tang and D. Becher and H. Kuo and Stillman, {G. E.} and M. Feng",

note = "Funding Information: We thank Dr. Werner G{\"o}tz (Hewlett-Packard) for the variable-temperature Hall data. We also acknowledge useful technical discussions with Dr. R.F. Karlicek, Dr. J.C. Zolper and Dr. C.P. Kuo. We also thank D.E. Dupuis for assistance in manuscript preparation. The work at The University of Texas-Austin was partially supported by the NSF Science and Technology Center Program under grant CHE-89-20120, the State of Texas Advanced Technology Program, by ONR under contract N00014-95-1-1302, and by DARPA under contract MDA972-95-3-0008. Support from Ford Motor Company is also gratefully acknowledged. The work at the University of Illinois at Urbana-Champaign was supported in part by DARPA under contract for N66001-97-C-8618. One of the authors (CJE) thanks the U. S. Air Force for support under the Palace Knights Program.; Proceedings of the 1998 40th Electronic Materials Conference, EMC-98 ; Conference date: 24-06-1998 Through 26-06-1998",

year = "1999",

month = mar,

doi = "10.1007/s11664-999-0034-x",

language = "English (US)",

volume = "28",

pages = "319--324",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

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TY - JOUR

T1 - Activation of silicon ion-implanted gallium nitride by furnace annealing

AU - Dupuis, R. D.

AU - Eiting, C. J.

AU - Grudowski, P. A.

AU - Hsia, H.

AU - Tang, Z.

AU - Becher, D.

AU - Kuo, H.

AU - Stillman, G. E.

AU - Feng, M.

N1 - Funding Information: We thank Dr. Werner Götz (Hewlett-Packard) for the variable-temperature Hall data. We also acknowledge useful technical discussions with Dr. R.F. Karlicek, Dr. J.C. Zolper and Dr. C.P. Kuo. We also thank D.E. Dupuis for assistance in manuscript preparation. The work at The University of Texas-Austin was partially supported by the NSF Science and Technology Center Program under grant CHE-89-20120, the State of Texas Advanced Technology Program, by ONR under contract N00014-95-1-1302, and by DARPA under contract MDA972-95-3-0008. Support from Ford Motor Company is also gratefully acknowledged. The work at the University of Illinois at Urbana-Champaign was supported in part by DARPA under contract for N66001-97-C-8618. One of the authors (CJE) thanks the U. S. Air Force for support under the Palace Knights Program.

PY - 1999/3

Y1 - 1999/3

N2 - Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

AB - Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.

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U2 - 10.1007/s11664-999-0034-x

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M3 - Conference article

AN - SCOPUS:0032638599

SN - 0361-5235

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SP - 319

EP - 324

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 3

T2 - Proceedings of the 1998 40th Electronic Materials Conference, EMC-98

Y2 - 24 June 1998 through 26 June 1998

ER -

Activation of silicon ion-implanted gallium nitride by furnace annealing

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