TY - JOUR
T1 - Activation of silicon ion-implanted gallium nitride by furnace annealing
AU - Dupuis, R. D.
AU - Eiting, C. J.
AU - Grudowski, P. A.
AU - Hsia, H.
AU - Tang, Z.
AU - Becher, D.
AU - Kuo, H.
AU - Stillman, G. E.
AU - Feng, M.
N1 - Funding Information:
We thank Dr. Werner Götz (Hewlett-Packard) for the variable-temperature Hall data. We also acknowledge useful technical discussions with Dr. R.F. Karlicek, Dr. J.C. Zolper and Dr. C.P. Kuo. We also thank D.E. Dupuis for assistance in manuscript preparation. The work at The University of Texas-Austin was partially supported by the NSF Science and Technology Center Program under grant CHE-89-20120, the State of Texas Advanced Technology Program, by ONR under contract N00014-95-1-1302, and by DARPA under contract MDA972-95-3-0008. Support from Ford Motor Company is also gratefully acknowledged. The work at the University of Illinois at Urbana-Champaign was supported in part by DARPA under contract for N66001-97-C-8618. One of the authors (CJE) thanks the U. S. Air Force for support under the Palace Knights Program.
PY - 1999/3
Y1 - 1999/3
N2 - Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.
AB - Ion implantation into III-V nitride materials is an important technology for high-power and high-temperature digital and monolithic microwave integrated circuits. We report the results of the electrical, optical, and surface morphology of Si ion-implanted GaN films using furnace annealing. We demonstrate high sheet-carrier densities for relatively low-dose (natoms = 5×1014 cm-2) Si implants into AlN/GaN/sapphire heteroepitaxial films. The samples that were annealed at 1150 °C in N2 for 5 min exhibited a smooth surface morphology and a sheet electron concentration ns to approximately 9.0×1013 cm-2, corresponding to an estimated 19% electrical activation and a 38% Si donor activation in GaN films grown on sapphire substrates. Variable-temperature Hall-effect measurements indicate a Si donor ionization energy approximately 15 meV.
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U2 - 10.1007/s11664-999-0034-x
DO - 10.1007/s11664-999-0034-x
M3 - Conference article
AN - SCOPUS:0032638599
SN - 0361-5235
VL - 28
SP - 319
EP - 324
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 3
T2 - Proceedings of the 1998 40th Electronic Materials Conference, EMC-98
Y2 - 24 June 1998 through 26 June 1998
ER -