Abstract
In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.
| Original language | English (US) |
|---|---|
| Article number | IMECE2004-61385 |
| Pages (from-to) | 187-190 |
| Number of pages | 4 |
| Journal | American Society of Mechanical Engineers, Materials Division (Publication) MD |
| Volume | 99 |
| DOIs | |
| State | Published - 2004 |
| Event | 2004 ASME International Mechanical Engineering Congress and Exposition, IMECE - Anaheim, CA, United States Duration: Nov 13 2004 → Nov 19 2004 |
Keywords
- Activation Energy
- Gold(Au)
- MEMS
- Relaxation Time
- Thin Film
- Time-Dependent Stress Relaxation
ASJC Scopus subject areas
- General Engineering