Activation energy measurement in thin gold film by MEMS-based tensile testing device

Jong H. Han, M Taher A Saif

Research output: Contribution to journalArticle

Abstract

In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.

Original languageEnglish (US)
Article numberIMECE2004-61385
Pages (from-to)187-190
Number of pages4
JournalAmerican Society of Mechanical Engineers, Materials Division (Publication) MD
Volume99
DOIs
StatePublished - 2004

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Electric power measurement
Tensile testing
Stress relaxation
Relaxation time
MEMS
Activation energy
Gold
Analytical models
Sputter deposition
Photolithography
Temperature
Etching
Thin films

Keywords

  • Activation Energy
  • Gold(Au)
  • MEMS
  • Relaxation Time
  • Thin Film
  • Time-Dependent Stress Relaxation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

@article{2db7b3c23a154f95a993a878bbfdad61,
title = "Activation energy measurement in thin gold film by MEMS-based tensile testing device",
abstract = "In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.",
keywords = "Activation Energy, Gold(Au), MEMS, Relaxation Time, Thin Film, Time-Dependent Stress Relaxation",
author = "Han, {Jong H.} and Saif, {M Taher A}",
year = "2004",
doi = "10.1115/IMECE2004-61385",
language = "English (US)",
volume = "99",
pages = "187--190",
journal = "American Society of Mechanical Engineers, Materials Division (Publication) MD",
issn = "1071-6939",

}

TY - JOUR

T1 - Activation energy measurement in thin gold film by MEMS-based tensile testing device

AU - Han, Jong H.

AU - Saif, M Taher A

PY - 2004

Y1 - 2004

N2 - In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.

AB - In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.

KW - Activation Energy

KW - Gold(Au)

KW - MEMS

KW - Relaxation Time

KW - Thin Film

KW - Time-Dependent Stress Relaxation

UR - http://www.scopus.com/inward/record.url?scp=19744372434&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19744372434&partnerID=8YFLogxK

U2 - 10.1115/IMECE2004-61385

DO - 10.1115/IMECE2004-61385

M3 - Article

AN - SCOPUS:19744372434

VL - 99

SP - 187

EP - 190

JO - American Society of Mechanical Engineers, Materials Division (Publication) MD

JF - American Society of Mechanical Engineers, Materials Division (Publication) MD

SN - 1071-6939

M1 - IMECE2004-61385

ER -