Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system

Patrick A. Juliano, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

Quantifying the turn-on behavior of electrostatic discharge (ESD) protection devices under subnanosecond transients is critical to achieving robust protection against the Charged Device Model stress. A wafer-level very fast transmission-line pulse system (VFTLP) has been developed and is shown to successfully measure the turn-on time of a common ESD protection device. Both formal analysis and practical details regarding VFTLP system construction and operation are documented.

Original languageEnglish (US)
Pages (from-to)95-103
Number of pages9
JournalIEEE Transactions on Device and Materials Reliability
Volume1
Issue number2
DOIs
StatePublished - Dec 1 2001

Keywords

  • COM
  • Electrostatic discharge
  • LVTSCR
  • TLP
  • VFTLP

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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