Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system

Patrick A. Juliano; Elyse Rosenbaum

doi:10.1109/7298.956702

Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system

Research output: Contribution to journal › Article › peer-review

Abstract

Quantifying the turn-on behavior of electrostatic discharge (ESD) protection devices under subnanosecond transients is critical to achieving robust protection against the Charged Device Model stress. A wafer-level very fast transmission-line pulse system (VFTLP) has been developed and is shown to successfully measure the turn-on time of a common ESD protection device. Both formal analysis and practical details regarding VFTLP system construction and operation are documented.

Original language	English (US)
Pages (from-to)	95-103
Number of pages	9
Journal	IEEE Transactions on Device and Materials Reliability
Volume	1
Issue number	2
DOIs	https://doi.org/10.1109/7298.956702
State	Published - 2001

Keywords

COM
Electrostatic discharge
LVTSCR
TLP
VFTLP

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Safety, Risk, Reliability and Quality
Electrical and Electronic Engineering

Online availability

10.1109/7298.956702

Library availability

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title = "Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system",

abstract = "Quantifying the turn-on behavior of electrostatic discharge (ESD) protection devices under subnanosecond transients is critical to achieving robust protection against the Charged Device Model stress. A wafer-level very fast transmission-line pulse system (VFTLP) has been developed and is shown to successfully measure the turn-on time of a common ESD protection device. Both formal analysis and practical details regarding VFTLP system construction and operation are documented.",

keywords = "COM, Electrostatic discharge, LVTSCR, TLP, VFTLP",

author = "Juliano, {Patrick A.} and Elyse Rosenbaum",

note = "Funding Information: Manuscript received March 15, 2001; revised May 10, 2001. This work was supported by a grant from the Semiconductor Research Corporation. The work of P. A. Juliano was supported by an SRC Graduate Fellowship. The authors are with the Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA (e-mail: [email protected]; [email protected]). Publisher Item Identifier S 1530-4388(01)06837-8.",

year = "2001",

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AU - Juliano, Patrick A.

AU - Rosenbaum, Elyse

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PY - 2001

Y1 - 2001

N2 - Quantifying the turn-on behavior of electrostatic discharge (ESD) protection devices under subnanosecond transients is critical to achieving robust protection against the Charged Device Model stress. A wafer-level very fast transmission-line pulse system (VFTLP) has been developed and is shown to successfully measure the turn-on time of a common ESD protection device. Both formal analysis and practical details regarding VFTLP system construction and operation are documented.

AB - Quantifying the turn-on behavior of electrostatic discharge (ESD) protection devices under subnanosecond transients is critical to achieving robust protection against the Charged Device Model stress. A wafer-level very fast transmission-line pulse system (VFTLP) has been developed and is shown to successfully measure the turn-on time of a common ESD protection device. Both formal analysis and practical details regarding VFTLP system construction and operation are documented.

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KW - Electrostatic discharge

KW - LVTSCR

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KW - VFTLP

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JO - IEEE Transactions on Device and Materials Reliability

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Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system

Abstract

Keywords

ASJC Scopus subject areas

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