Accurate simulation of RF MEMS VCO performance including phase noise

Manas Behera; Volodymyr Kratyuk; Sudipto K. De; Narayan R. Aluru; Yutao Hu; Kartikeya Mayaram

doi:10.1109/JMEMS.2004.839317

Accurate simulation of RF MEMS VCO performance including phase noise

Manas Behera, Volodymyr Kratyuk, Sudipto K. De, Narayan R. Aluru, Yutao Hu, Kartikeya Mayaram

Mechanical Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A new coupled circuit and electrostatic/mechanical simulator (COSMO) is presented for the design of low phase noise radio frequency (RF) microelectromechanical systems (MEMS) voltage-controlled oscillators (VCOs). The numerical solution of device level equations is used to accurately compute the capacitance of a MEMS capacitor. This coupled with a circuit simulator facilitates the simulation of circuits incorporating MEMS capacitors. In addition, the noise from the MEMS capacitor is combined with a nonlinear circuit-level noise analysis to determine the phase noise of RF MEMS VCO. Simulations of two different MEMS VCO architectures show good agreement with experimentally observed behavior.

Original language	English (US)
Pages (from-to)	313-325
Number of pages	13
Journal	Journal of Microelectromechanical Systems
Volume	14
Issue number	2
DOIs	https://doi.org/10.1109/JMEMS.2004.839317
State	Published - Apr 2005

Keywords

Circuit simulation
Coupled circuit and device simulation
Electrostatic/mechanical simulator
Microelectromechanical systems (MEMS) capacitor
Microelectromechanical systems voltage-controlled oscillator (MEMS VCO)
Noise simulation
Phase noise
Radio frequency voltage-controlled oscillator (RF VCO)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Mechanical Engineering

Online availability

10.1109/JMEMS.2004.839317

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abstract = "A new coupled circuit and electrostatic/mechanical simulator (COSMO) is presented for the design of low phase noise radio frequency (RF) microelectromechanical systems (MEMS) voltage-controlled oscillators (VCOs). The numerical solution of device level equations is used to accurately compute the capacitance of a MEMS capacitor. This coupled with a circuit simulator facilitates the simulation of circuits incorporating MEMS capacitors. In addition, the noise from the MEMS capacitor is combined with a nonlinear circuit-level noise analysis to determine the phase noise of RF MEMS VCO. Simulations of two different MEMS VCO architectures show good agreement with experimentally observed behavior.",

keywords = "Circuit simulation, Coupled circuit and device simulation, Electrostatic/mechanical simulator, Microelectromechanical systems (MEMS) capacitor, Microelectromechanical systems voltage-controlled oscillator (MEMS VCO), Noise simulation, Phase noise, Radio frequency voltage-controlled oscillator (RF VCO)",

author = "Manas Behera and Volodymyr Kratyuk and De, {Sudipto K.} and Aluru, {Narayan R.} and Yutao Hu and Kartikeya Mayaram",

note = "Funding Information: Manuscript received December 18, 2003; revised July 16, 2004. This work is supported in part by NSF Grants CCR-0121616 and CCR-0120275, and by the SRC under Contract 2001-TJ-922. Subject Editor H. Zappe. M. Behera and Y. Hu were with the School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331 USA. They are presently with Agilent Technologies, Santa Rosa, CA 95403 USA. V. Kratyuk, and K. Mayaram are with the School of Electrical Engineering and Computer Science, Oregon State University, Corvallis, OR 97331 USA. S. K. De and N. R. Aluru are with the Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA. Digital Object Identifier 10.1109/JMEMS.2004.839317",

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AU - De, Sudipto K.

AU - Aluru, Narayan R.

AU - Hu, Yutao

AU - Mayaram, Kartikeya

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Accurate simulation of RF MEMS VCO performance including phase noise

Abstract

Keywords

ASJC Scopus subject areas

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