Accurate methods for simulating electroreflectance and photoreflectance spectra of GaAs

P. L. Jackson, Edmund G Seebauer

Research output: Contribution to journalArticlepeer-review

Abstract

Various methods have been used up to now in order to simulate the effects of inhomogeneous electric fields on the modulation spectra of semiconductors. Some methods involve partitioning a layer with a continuously varying field into a series of discrete steps. We show that in the case of a wide space-charge region, solving the resulting set of reflectance equations directly can give misleading results under some conditions because of subtle numerical problems. However, a WKB approach exists that avoids these problems and can be used for GaAs under essentially all conditions. Our simulations lend support to an excitonic mechanism for spectral]] rotation" in photoreflectance of GaAs even at room temperature.

Original languageEnglish (US)
Pages (from-to)943-948
Number of pages6
JournalJournal of Applied Physics
Volume69
Issue number2
DOIs
StatePublished - Dec 1 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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