Various methods have been used up to now in order to simulate the effects of inhomogeneous electric fields on the modulation spectra of semiconductors. Some methods involve partitioning a layer with a continuously varying field into a series of discrete steps. We show that in the case of a wide space-charge region, solving the resulting set of reflectance equations directly can give misleading results under some conditions because of subtle numerical problems. However, a WKB approach exists that avoids these problems and can be used for GaAs under essentially all conditions. Our simulations lend support to an excitonic mechanism for spectral]] rotation" in photoreflectance of GaAs even at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)