Abstract
An accurate technique for determining the resonance frequency and the intrinsic Q factor for optically controlled dielectric resonators is presented. by introducing an appropriate set of equivalent electric currents, the original problem is decomposed into two separated auxiliary structures, to which the spectral domain approach is extended so that the characteristic equation for the resonance frequency and the intrinsic Q factor is derived. The resonance frequency and the intrinsic Q factor are presented as a function of the optically induced plasma density. When the photosensitive semiconductor waver is replaced by a high-permittivity dielectric, the presented results agree well with available calculated and measured data for the lossy dielectric resonators.
Original language | English (US) |
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Pages (from-to) | 1466-1468 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 27 |
Issue number | 16 |
DOIs | |
State | Published - Feb 1 1991 |
Keywords
- Dielectrics and dielectric devices resonators
- Microwave devices and components
- Modelling
- Resonators
ASJC Scopus subject areas
- Electrical and Electronic Engineering