Accelerated testing of SiC>2 reliability

Elyse Rosenbaum, Joseph C. King, Chenming Hu

Research output: Contribution to journalArticle

Abstract

-This paper compares several popular accelerated test methods for projecting SiU2 lifetime distribution or failure rate: constant-voltage and constant-current time-to-breakdown and charge-to-breakdown tests, ramp-voltage breakdown test, and ramp-current charge-to-breakdown test. Charge trapping affects the electric field acceleration parameter for time-to-breakdown and the value of breakdown voltage. Practical considerations favor ramp breakdown testing for gate oxide defect characterization. The effective thinning model is used for defect characterization and the ramp-voltage breakdown test is shown to be superior to the ramp-current QBD test for extraction of the defect distribution. Measurement issues are also discussed.

Original languageEnglish (US)
Pages (from-to)70-80
Number of pages11
JournalIEEE Transactions on Electron Devices
Volume43
Issue number1
DOIs
StatePublished - Dec 1 1996

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Electric breakdown
Defects
Testing
Charge trapping
Oxides
Rate constants
Electric fields
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Accelerated testing of SiC>2 reliability. / Rosenbaum, Elyse; King, Joseph C.; Hu, Chenming.

In: IEEE Transactions on Electron Devices, Vol. 43, No. 1, 01.12.1996, p. 70-80.

Research output: Contribution to journalArticle

Rosenbaum, Elyse ; King, Joseph C. ; Hu, Chenming. / Accelerated testing of SiC>2 reliability. In: IEEE Transactions on Electron Devices. 1996 ; Vol. 43, No. 1. pp. 70-80.
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