ACCELERATED-ION BEAM DOPING DURING SI GROWTH BY MOLECULAR BEAM EPITAXY AND ION-ENCHANCED IN FILM DEPOSITION USING A LOW-ENERGY (40-300 EV) IN ION SOURCE.

M. A. Hasan, J. Knall, S. A. Barnett, J. E. Sundgren, A. Rockett, J. E. Greene

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