ACCELERATED-ION BEAM DOPING DURING SI GROWTH BY MOLECULAR BEAM EPITAXY AND ION-ENCHANCED IN FILM DEPOSITION USING A LOW-ENERGY (40-300 EV) IN ION SOURCE.

M. A. Hasan, J. Knall, S. A. Barnett, J. E. Sundgren, A. Rockett, J. E. Greene

Research output: Contribution to journalConference article

Abstract

In this abstract, the design, operation, and use of a single-grid, electron impact, ultra-high vacuum (uhv) compatible, low-to-medium energy ion source capable of operating with medium vapor-pressure source materials such as In are described. The present design was based on a previously reported source used for higher vapor pressure metals such as Zn and As. A crucial feature of the present design was the use of a single crucible which served as both in effusion cell and discharge chamber, and which helped maintain the temperature of all source surfaces high enough to avoid

Original languageEnglish (US)
Pages (from-to)1017-1018
Number of pages2
JournalVacuum
Volume36
Issue number11-12
DOIs
StatePublished - Jan 1 1986
EventLow Energy Ion Beams, Proc of the Fourth Conf - Brighton, Engl
Duration: Apr 7 1986Apr 10 1986

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ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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