Absolute sputtering yield of Ti/TiN by Ar+/N+ at 400-700 eV

R. Ranjan, J. P. Allain, M. R. Hendricks, D. N. Ruzic

Research output: Contribution to journalArticle

Abstract

The measurement and modelling of sputtering yield in titanium (Ti) and titanium nitride (TiN) films samples is presented. The sputtering was carried out by argon and nitrogen beams at normal incidence and low energies.The films are used as diffusion barrier layers in aluminium copper metallization. The sputtering yield for Ti is found to be lower for TiN target due to preferential sputtering of nitrogen. The experimental result established that the ionized physical vapor deposition system is advantageous in mettalic mode.

Original languageEnglish (US)
Pages (from-to)1004-1007
Number of pages4
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume19
Issue number3
DOIs
StatePublished - Jan 1 2001

Fingerprint

Titanium nitride
titanium nitrides
Titanium
Sputtering
titanium
sputtering
Nitrogen
nitrogen
Diffusion barriers
Argon
Physical vapor deposition
barrier layers
Metallizing
Aluminum
Copper
incidence
argon
vapor deposition
aluminum
copper

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Absolute sputtering yield of Ti/TiN by Ar+/N+ at 400-700 eV. / Ranjan, R.; Allain, J. P.; Hendricks, M. R.; Ruzic, D. N.

In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 19, No. 3, 01.01.2001, p. 1004-1007.

Research output: Contribution to journalArticle

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