Absolute sputtering yield of Ti/TiN by Ar+/N+ at 400-700 eV

R. Ranjan, J. P. Allain, M. R. Hendricks, D. N. Ruzic

Research output: Contribution to journalArticle

Abstract

The measurement and modelling of sputtering yield in titanium (Ti) and titanium nitride (TiN) films samples is presented. The sputtering was carried out by argon and nitrogen beams at normal incidence and low energies.The films are used as diffusion barrier layers in aluminium copper metallization. The sputtering yield for Ti is found to be lower for TiN target due to preferential sputtering of nitrogen. The experimental result established that the ionized physical vapor deposition system is advantageous in mettalic mode.

Original languageEnglish (US)
Pages (from-to)1004-1007
Number of pages4
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume19
Issue number3
DOIs
StatePublished - Jan 1 2001

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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