Absence of 13C incorporation in 13CCl 4-doped InP grown by metalorganic chemical vapor deposition

B. T. Cunningham, J. E. Baker, S. A. Stockman, G. E. Stillman

Research output: Contribution to journalArticle

Abstract

Intentional carbon doping of low-pressure metalorganic chemical vapor deposition (MOCVD) grown InP has been attempted with a 500 ppm mixture of 13CCl4 in high-purity H2, which has been used to obtain carbon-acceptor concentrations as high as 1×1019 cm-3 in GaAs. Under growth conditions similar to those used for heavy carbon incorporation in GaAs, injection of 13CCl4 into the growth reactor during growth of InP did not produce any measurable change in the carrier concentration of the InP epitaxial layers or any change in the 13C concentration above the 13C background in secondary-ion mass spectroscopy analysis. These results support previous low-temperature photoluminescence measurements of high-purity InP in which no residual carbon acceptor is observed under many growth techniques and growth conditions, and hence support the hypothesis that carbon is not incorporated in InP grown by MOCVD.

Original languageEnglish (US)
Pages (from-to)1760-1762
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number18
DOIs
StatePublished - Dec 1 1990

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metalorganic chemical vapor deposition
carbon
purity
mass spectroscopy
low pressure
reactors
injection
photoluminescence
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Absence of 13C incorporation in 13CCl 4-doped InP grown by metalorganic chemical vapor deposition. / Cunningham, B. T.; Baker, J. E.; Stockman, S. A.; Stillman, G. E.

In: Applied Physics Letters, Vol. 56, No. 18, 01.12.1990, p. 1760-1762.

Research output: Contribution to journalArticle

Cunningham, B. T. ; Baker, J. E. ; Stockman, S. A. ; Stillman, G. E. / Absence of 13C incorporation in 13CCl 4-doped InP grown by metalorganic chemical vapor deposition. In: Applied Physics Letters. 1990 ; Vol. 56, No. 18. pp. 1760-1762.
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