Absence of ¹³C incorporation in ¹³CCl ₄-doped InP grown by metalorganic chemical vapor deposition

Intentional carbon doping of low-pressure metalorganic chemical vapor deposition (MOCVD) grown InP has been attempted with a 500 ppm mixture of ¹³CCl₄ in high-purity H₂, which has been used to obtain carbon-acceptor concentrations as high as 1×10¹⁹ cm^-3 in GaAs. Under growth conditions similar to those used for heavy carbon incorporation in GaAs, injection of ¹³CCl₄ into the growth reactor during growth of InP did not produce any measurable change in the carrier concentration of the InP epitaxial layers or any change in the ¹³C concentration above the ¹³C background in secondary-ion mass spectroscopy analysis. These results support previous low-temperature photoluminescence measurements of high-purity InP in which no residual carbon acceptor is observed under many growth techniques and growth conditions, and hence support the hypothesis that carbon is not incorporated in InP grown by MOCVD.