Absence of correlation between built-in electric dipole moment and quantum Stark effect in single InAs/GaAs self-assembled quantum dots

Weidong Sheng, Jean Pierre Leburton

Research output: Contribution to journalArticle

Abstract

We report significant deviations from the usual quadratic dependence of the ground-state interband transition energy on applied electric fields in single InAs/GaAs self-assembled quantum dots. While earlier works have used conventional second-order perturbation theory to claim a negative dipole moment in the presence of external electric field, we show that this theory fails to correctly describe the Stark shift for electric field below F = 10 kV/cm in high dots. Eight-band k·p calculations demonstrate that this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affect the hole ground state.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number12
DOIs
StatePublished - Mar 19 2003

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Electric dipole moments
Stark effect
electric moments
electric dipoles
Semiconductor quantum dots
dipole moments
quantum dots
Electric fields
Ground state
electric fields
ground state
Dipole moment
Electron transitions
perturbation theory
deviation
shift
Chemical analysis
gallium arsenide
indium arsenide
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "We report significant deviations from the usual quadratic dependence of the ground-state interband transition energy on applied electric fields in single InAs/GaAs self-assembled quantum dots. While earlier works have used conventional second-order perturbation theory to claim a negative dipole moment in the presence of external electric field, we show that this theory fails to correctly describe the Stark shift for electric field below F = 10 kV/cm in high dots. Eight-band k·p calculations demonstrate that this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affect the hole ground state.",
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AB - We report significant deviations from the usual quadratic dependence of the ground-state interband transition energy on applied electric fields in single InAs/GaAs self-assembled quantum dots. While earlier works have used conventional second-order perturbation theory to claim a negative dipole moment in the presence of external electric field, we show that this theory fails to correctly describe the Stark shift for electric field below F = 10 kV/cm in high dots. Eight-band k·p calculations demonstrate that this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affect the hole ground state.

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