We report significant deviations from the usual quadratic dependence of the ground-state interband transition energy on applied electric fields in single InAs/GaAs self-assembled quantum dots. While earlier works have used conventional second-order perturbation theory to claim a negative dipole moment in the presence of external electric field, we show that this theory fails to correctly describe the Stark shift for electric field below F = 10 kV/cm in high dots. Eight-band k·p calculations demonstrate that this effect is predominantly due to the three-dimensional strain field distribution which for various dot shapes and stoichiometric compositions drastically affect the hole ground state.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Mar 19 2003|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics