Absence of coherence effects of carrier energy and velocity in GaAs+-AlGaAs-GaAs- tunnel structures

T. Wang, J. P. Leburton, K. Hess

Research output: Contribution to journalArticle

Abstract

A Monte Carlo calculation has been performed to investigate the electron-phonon interaction and the possibility of coherent phonon emission in the buffer layer of semiconductor-insulator-semiconductor structures. Spatial coherence is shown to be virtually absent in the voltage range of tunnel-junction experiments where current structures with the period of the phonon energy have been observed. Tiny oscillations are obtained for carrier energy and velocity as a function of the gate voltage. However, the fluctuations are too weak to confirm models based on substantial periodic energy variations due to the emission of optical phonons.

Original languageEnglish (US)
Pages (from-to)2906-2908
Number of pages3
JournalPhysical Review B
Volume33
Issue number4
DOIs
StatePublished - Jan 1 1986

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aluminum gallium arsenides
tunnels
Tunnels
Semiconductor materials
Electron-phonon interactions
Tunnel junctions
Electric potential
Buffer layers
SIS (semiconductors)
Phonons
electric potential
electron phonon interactions
tunnel junctions
energy
phonons
buffers
oscillations
Experiments
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Absence of coherence effects of carrier energy and velocity in GaAs+-AlGaAs-GaAs- tunnel structures. / Wang, T.; Leburton, J. P.; Hess, K.

In: Physical Review B, Vol. 33, No. 4, 01.01.1986, p. 2906-2908.

Research output: Contribution to journalArticle

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