Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature

P. M. Voyles, J. E. Gerbi, M. M.J. Treacy, J. M. Gibson, J. R. Abelson

Research output: Contribution to journalArticle


Fluctuation electron microscopy was used to account for the continuous evolution in the paracrystalline medium-range order of amorphous silicon thin films with increasing substrate temperature from the amorphous to polycrystalline regimes. There was no first-order, order-disorder phase transition between amorphous and polycrystalline silicon films.

Original languageEnglish (US)
Pages (from-to)5514-5517
Number of pages4
JournalPhysical review letters
Issue number24
StatePublished - Jun 11 2001


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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