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Ab initio study of point defects near stacking faults in 3C-SiC
Jianqi Xi
, Bin Liu
, Yanwen Zhang
, William J. Weber
Research output
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Contribution to journal
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Article
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peer-review
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Keyphrases
Stacking Faults
100%
Ab Initio Study
100%
3C-SiC
100%
Band Gap
25%
Density Functional Theory
25%
Electronic Structure
25%
Strain Field
25%
Defect States
25%
Energy Landscape
25%
Local Environment
25%
Ab Initio Methods
25%
Stacking Sequence
25%
Silicon Layer
25%
Intrinsic Defects
25%
C-Si
25%
Stable Configuration
25%
Intrinsic Stacking Faults
25%
Relaxation Structure
25%
Fault Region
25%
Ionic Relaxation
25%
Tetrahedral Configuration
25%
Orientation Rotation
25%
Engineering
Strain Field
100%
Intrinsic Stacking Fault
100%
Silicon Layer
100%
Band Gap
100%
Electronic State
100%
Material Science
Point Defect
100%
Crystal Defect
100%
Silicon
80%
Density
20%
Ab Initio Method
20%
Energy Landscape
20%