Abstract
This paper presents a W-Band Push-Push VCO with a 64X static frequency divider, for a total frequency division of 128X, using InP/InGaAs DHBT technology. The oscillator operates around a center frequency of 77.75 GHz with a measured phase noise of < 94 dBc/Hz at a 1 MHz offset, and employs a unique tuning methodology that uses only the intrinsic parasitics of the DHBTs to give a tuning range of L.3 GHz. The oscillator, which includes buffers to drive the divider chain, has a power dissipation of 84 mW, one of the lowest power dissipations reported for a III-V DHBT based push-push oscillator.
| Original language | English (US) |
|---|---|
| Title of host publication | IMS 2012 - 2012 IEEE MTT-S International Microwave Symposium |
| DOIs | |
| State | Published - 2012 |
| Event | 2012 IEEE MTT-S International Microwave Symposium, IMS 2012 - Montreal, QC, Canada Duration: Jun 17 2012 → Jun 22 2012 |
Other
| Other | 2012 IEEE MTT-S International Microwave Symposium, IMS 2012 |
|---|---|
| Country/Territory | Canada |
| City | Montreal, QC |
| Period | 6/17/12 → 6/22/12 |
Keywords
- Double heterojunction bipolar transistors
- Indium phosphide
- Microwave oscillators
- Millimeter wave integrated circuits
- Phase locked loops
- Voltage-controlled oscillators
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Radiation
- Condensed Matter Physics