A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applications

Kexin Li, Shaloo Rakheja

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

III-nitride high electron mobility transistors (HEMTs) are a strong candidate for high-power radio frequency (RF) applications due to their ability to support high breakdown fields, while maintaining a high electron mobility and a high density of the two-dimensional electron gas (2DEG). Analytic device models that are physically motivated and mathematically robust are preferred for circuit simulations. Most prior works have focused on compact models for 111-nitride HEMTs that operate in the drift-diffusive limit, while Ref. [1] presents a threshold-voltage-based compact model for quasi-ballistic gallium nitride (GaN) HEMTs using an empirical channel charge model. In this paper, we present a unified and self-consistent current-voltage (I-V) and capacitance-voltage (C-V) model of III-nitride HEMTs that is valid for quasi-ballistic transport. The terminal charges are used to calculate inter-nodal capacitances ensuring charge conservation in the device. Both I-V and C-V model are validated against numerical TCAD simulations and experimental data of short-channel GaN HEMTs. Effects of fringing charge resulting from bulk and surface traps are also incorporated in the model. Key equations of the dynamic model are presented in Table 1. Details of the static I-V model of III-nitride HEMTs are presented elsewhere by the authors [2], and equations are omitted for brevity.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
DOIs
StatePublished - Aug 20 2018
Externally publishedYes
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2018-June
ISSN (Print)1548-3770

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period6/24/186/27/18

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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