A unified charge-current compact model of gallium nitride transistors for RF and digital applications

Keyphrases

• Compact Model 100%
• GaN HEMT 100%
• Charging Current 100%
• Digital Applications 100%
• RF Applications 100%
• NWFET 50%
• Analytic Model 50%
• Bias Conditions 50%
• Technology Devices 50%
• Dynamic Behavior 50%
• Temperature Conditions 50%
• III-nitrides 50%
• Static Behavior 50%
• Device-circuit Co-design 50%
• High Electron Mobility Transistor 50%

Material Science

• Transistor 100%
• Gallium Nitride 100%
• Electronic Circuit 50%
• Nanowire 50%
• Field Effect Transistor 50%
• Nitride Compound 50%
• Electron Mobility 50%