TY - GEN
T1 - A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices
AU - Shukla, Ankit
AU - Heller, Laura
AU - Morshed, Md Golam
AU - Rehm, Laura
AU - Ghosh, Avik W.
AU - Kent, Andrew D.
AU - Rakheja, Shaloo
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with ≲ 200 Mb/s throughput and pJ/bit energy consumption. A high temperature sensitivity, however, adversely affects their performance as a TRNG. Superparamagnetic MTJs employing low-barrier magnets (LBMs) have also been used for TRNG operation. Although LBM-based MTJs can operate at low energy, they suffer from slow dynamics, sensitivity to process variations, and low fabrication yield. In this paper, we model a TRNG based on medium-barrier magnets (MBMs) with perpendicular magnetic anisotropy. The proposed MBM-based TRNG is driven with short voltage pulses to induce ballistic, yet stochastic, magnetization switching. We show that the proposed TRNG can operate at frequencies of about 500 MHz while consuming less than 100 fJ/bit of energy. In the short-pulse ballistic limit, the switching probability of our device shows robustness to variations in temperature and material parameters relative to LBMs and HBMs. Our results suggest that MBM-based MTJs are suitable candidates for building fast and energy-efficient TRNG hardware units for probabilistic computing.
AB - Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with ≲ 200 Mb/s throughput and pJ/bit energy consumption. A high temperature sensitivity, however, adversely affects their performance as a TRNG. Superparamagnetic MTJs employing low-barrier magnets (LBMs) have also been used for TRNG operation. Although LBM-based MTJs can operate at low energy, they suffer from slow dynamics, sensitivity to process variations, and low fabrication yield. In this paper, we model a TRNG based on medium-barrier magnets (MBMs) with perpendicular magnetic anisotropy. The proposed MBM-based TRNG is driven with short voltage pulses to induce ballistic, yet stochastic, magnetization switching. We show that the proposed TRNG can operate at frequencies of about 500 MHz while consuming less than 100 fJ/bit of energy. In the short-pulse ballistic limit, the switching probability of our device shows robustness to variations in temperature and material parameters relative to LBMs and HBMs. Our results suggest that MBM-based MTJs are suitable candidates for building fast and energy-efficient TRNG hardware units for probabilistic computing.
KW - Energy-efficient computing
KW - Magnetic tunnel junctions
KW - Probabilistic switch
KW - Process variability
KW - Spintronics
KW - True random number generation
UR - http://www.scopus.com/inward/record.url?scp=85161483369&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85161483369&partnerID=8YFLogxK
U2 - 10.1109/ISQED57927.2023.10129319
DO - 10.1109/ISQED57927.2023.10129319
M3 - Conference contribution
AN - SCOPUS:85161483369
T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED
BT - Proceedings of the 24th International Symposium on Quality Electronic Design, ISQED 2023
PB - IEEE Computer Society
T2 - 24th International Symposium on Quality Electronic Design, ISQED 2023
Y2 - 5 April 2023 through 7 April 2023
ER -