A temperature insensitive DC-contact RF-MEMS switch

Songbin Gong, Theodore Reck, N. Scott Barker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This article details an investigation on the temperature variation of cantilever-structured RF-MEMS switches. Temperature-induced out-of-plane deformation of the cantilever was observed in the measurement of cryogenic switches in this research. Three-dimensional multi-physics finite element analysis was performed to explain the deformation. Experimental results are also shown to verify the simulation results. A stress-relaxation geometry is proposed and fabricated for a temperature insensitive switch design. The measured temperature insensitive switch demonstrates an actuation voltage response to temperature of 11 mV/K over 220 K temperature range (300 to 77 K) and outstanding broadband RF performance with an insertion-loss less than 0.8 dB and isolation better than 24 dB up to 50 GHz.

Original languageEnglish (US)
Title of host publicationEuropean Microwave Week 2010, EuMW2010
Subtitle of host publicationConnecting the World, Conference Proceedings - European Microwave Conference, EuMC 2010
Pages1114-1117
Number of pages4
StatePublished - 2010
Externally publishedYes
Event13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010 - Paris, France
Duration: Sep 28 2010Sep 30 2010

Other

Other13th European Microwave Week 2010, EuMW2010: Connecting the World - 40th European Microwave Conference, EuMC 2010
CountryFrance
CityParis
Period9/28/109/30/10

Keywords

  • Broadband
  • Cantilever
  • Cryogenic
  • DC-contact
  • Low loss
  • MEMS
  • Series switch

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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