A TEM study of the crystallography and defect structures of single crystal and polycrystalline copper indium diselenide

Keyphrases

• Antiphase Boundary 33%
• Antisite Defects 33%
• Beam Diffraction 33%
• Bragg Reflection 33%
• Convergent Beam 33%
• Copper Indium Diselenide 100%
• CuInSe2 66%
• Defect Analysis 33%
• Defect Density 33%
• Defected Ground Structure 100%
• Diffraction Effect 33%
• Diffraction Pattern 66%
• Dislocation 100%
• Double Diffraction 33%
• Inelastic Scattering 33%
• Low Energy 33%
• Magnetron Sputtering Deposition 33%
• Microtwins 33%
• Planar Defects 66%
• Polycrystalline Copper 100%
• Polycrystalline Films 66%
• Scattering Effect 33%
• Selected Area Electron Diffraction 66%
• Single Crystal 66%
• Single Crystal Copper 100%
• Slip Plane 33%
• Stacking Faults 33%
• Subtle Differences 33%
• Superdislocation 33%
• Systematic Defects 33%
• TEM Study 100%
• Ternary Compound Semiconductor 33%
• Vertical Bridgman Method 33%
• Zone Axis 33%

Material Science

• Compound Semiconductor 33%
• Crystal Defect 100%
• Crystallography 100%
• Defect Density 33%
• Diffraction Pattern 66%
• Film 66%
• Indium 100%
• Magnetron Sputtering 33%
• Selected Area Diffraction 66%
• Single Crystal 100%

Physics

• Crystal Defect 100%