A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices

Milton Feng, C. L. Lau, C. Ito

Research output: Contribution to journalArticlepeer-review

Fingerprint Dive into the research topics of 'A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy