Abstract
The current gain cutoff frequency, ft, has become a critical figure-of-merit for evaluating performance of MESFET and HEMT devices. The ft is related to a capacitance parameter, Ctot, through the equation ft= Gm/(2πCtot). This capacitance, however, includes a parasitic component primarily due to contact pad and device geometry as well as a parasitic component due to Rd, Rs and Rds. This paper describes a technique which determines this parasitic capacitance for FET-type devices. Consistently accurate corrections can then be made to reported ft values. Ion implanted InGaAs MESFET’s with 0.25 µ gate lengths have achieved 120 GHz ft before correction and 151 GHz f, after correction.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1880-1882 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 39 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 1991 |
ASJC Scopus subject areas
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Feng, M., Lau, C. L., & Ito, C. (1991). A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices. IEEE Transactions on Microwave Theory and Techniques, 39(11), 1880-1882. https://doi.org/10.1109/22.97490