A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices

Milton Feng; C. L. Lau; C. Ito

doi:10.1109/22.97490

A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices

Milton Feng, C. L. Lau, C. Ito

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The current gain cutoff frequency, ft, has become a critical figure-of-merit for evaluating performance of MESFET and HEMT devices. The ft is related to a capacitance parameter, Ctot, through the equation ft= Gm/(2πCtot). This capacitance, however, includes a parasitic component primarily due to contact pad and device geometry as well as a parasitic component due to Rd, Rs and Rds. This paper describes a technique which determines this parasitic capacitance for FET-type devices. Consistently accurate corrections can then be made to reported ft values. Ion implanted InGaAs MESFET’s with 0.25 µ gate lengths have achieved 120 GHz ft before correction and 151 GHz f, after correction.

Original language	English (US)
Pages (from-to)	1880-1882
Number of pages	3
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	39
Issue number	11
DOIs	https://doi.org/10.1109/22.97490
State	Published - Nov 1991

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/22.97490

Fingerprint Dive into the research topics of 'A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices'. Together they form a unique fingerprint.

Cite this

@article{7f0aecc022c14acd9d9ca340fb36b4b9,

title = "A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices",

abstract = "The current gain cutoff frequency, ft, has become a critical figure-of-merit for evaluating performance of MESFET and HEMT devices. The ft is related to a capacitance parameter, Ctot, through the equation ft= Gm/(2πCtot). This capacitance, however, includes a parasitic component primarily due to contact pad and device geometry as well as a parasitic component due to Rd, Rs and Rds. This paper describes a technique which determines this parasitic capacitance for FET-type devices. Consistently accurate corrections can then be made to reported ft values. Ion implanted InGaAs MESFET{\textquoteright}s with 0.25 µ gate lengths have achieved 120 GHz ft before correction and 151 GHz f, after correction.",

author = "Milton Feng and Lau, {C. L.} and C. Ito",

year = "1991",

month = nov,

doi = "10.1109/22.97490",

language = "English (US)",

volume = "39",

pages = "1880--1882",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - A Technique for Correction of Parasitic Capacitance on Microwave ftMeasurements of MESFET and HEMT Devices

AU - Feng, Milton

AU - Lau, C. L.

AU - Ito, C.

PY - 1991/11

Y1 - 1991/11

N2 - The current gain cutoff frequency, ft, has become a critical figure-of-merit for evaluating performance of MESFET and HEMT devices. The ft is related to a capacitance parameter, Ctot, through the equation ft= Gm/(2πCtot). This capacitance, however, includes a parasitic component primarily due to contact pad and device geometry as well as a parasitic component due to Rd, Rs and Rds. This paper describes a technique which determines this parasitic capacitance for FET-type devices. Consistently accurate corrections can then be made to reported ft values. Ion implanted InGaAs MESFET’s with 0.25 µ gate lengths have achieved 120 GHz ft before correction and 151 GHz f, after correction.

AB - The current gain cutoff frequency, ft, has become a critical figure-of-merit for evaluating performance of MESFET and HEMT devices. The ft is related to a capacitance parameter, Ctot, through the equation ft= Gm/(2πCtot). This capacitance, however, includes a parasitic component primarily due to contact pad and device geometry as well as a parasitic component due to Rd, Rs and Rds. This paper describes a technique which determines this parasitic capacitance for FET-type devices. Consistently accurate corrections can then be made to reported ft values. Ion implanted InGaAs MESFET’s with 0.25 µ gate lengths have achieved 120 GHz ft before correction and 151 GHz f, after correction.

UR - http://www.scopus.com/inward/record.url?scp=0026259653&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026259653&partnerID=8YFLogxK

U2 - 10.1109/22.97490

DO - 10.1109/22.97490

M3 - Article

AN - SCOPUS:0026259653

VL - 39

SP - 1880

EP - 1882

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 11

ER -