TY - GEN
T1 - A study of vertical SiGe thyristor design and optimization
AU - Joshi, Sopan
AU - Ida, Richard
AU - Rosenbaum, Elyse
N1 - Publisher Copyright:
© 2003 ESDA.
PY - 2003
Y1 - 2003
N2 - We present extensive measurement results investigating the design and optimization of vertical SiGe thyristors for use as ESD protection elements in RF integrated circuits. Experiments include variations of the anode material, contact geometry, and buried layer, as well as a detailed study of optimal area scaling. RF characterization using s-parameter data is presented.
AB - We present extensive measurement results investigating the design and optimization of vertical SiGe thyristors for use as ESD protection elements in RF integrated circuits. Experiments include variations of the anode material, contact geometry, and buried layer, as well as a detailed study of optimal area scaling. RF characterization using s-parameter data is presented.
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M3 - Conference contribution
AN - SCOPUS:84945206082
T3 - Electrical Overstress/Electrostatic Discharge Symposium Proceedings
BT - 2003 Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
PB - ESD Association
T2 - 25th Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2003
Y2 - 21 September 2003 through 25 September 2003
ER -