Abstract
We present the experimental results on the three-terminal on-state and off-state breakdown voltage studies of recessed-gate GaN MESFETs. Typical values of BVDG = 57 V and BVDS = 46 V for the off-state breakdown voltages (BV) were measured at a value of current IG = -0.05 mA/mm. On-state BV measurements were carried out at constant extracted gate current values of IG = -0.01 mA/mm and -0.05 mA/mm with the drain current being swept from ID = |IG| (off-state) to ID=5 mA/mm (on-state). The values for BVon loci at ID = |IG| (off-state) match the results for the off-state BV measurements. In addition, a collapse of the I-V curves characterized by suppressed drain currents was observed after each BV experimental run, but the original I-V curves could be recovered after exposure to light from a blue LED. We relate the collapse of the drain current to the presence of electron traps.
| Original language | English (US) |
|---|---|
| Pages | 110-114 |
| Number of pages | 5 |
| State | Published - 2000 |
| Externally published | Yes |
| Event | Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices - Ithaca, NY, United States Duration: Aug 7 2000 → Aug 9 2000 |
Other
| Other | Proceedings of 2000 IEEE/Cornell Conference on High Performance Devices |
|---|---|
| Country/Territory | United States |
| City | Ithaca, NY |
| Period | 8/7/00 → 8/9/00 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering