A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation

Ying Yu Chen, Artem Rogachev, Amit Sangai, Giuseppe Iannaccone, Gianluca Fiori, Deming Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the first parameterized, SPICE-compatible compact model of a Graphene Nano-Ribbon Field-Effect Transistor (GNRFET) with doped reservoirs that also supports process variation. The current and charge models closely match numerical TCAD simulations. In addition, process variation in transistor dimension, edge roughness, and doping level in the reservoir are accurately modeled. Our model provides a means to analyze delay and power of graphene-based circuits under process variation, and offers design and fabrication insights for graphene circuits in the future. We show that edge roughness severely degrades the advantages of GNRFET circuits; however, GNRFET is still a good candidate for low-power applications.

Original languageEnglish (US)
Title of host publicationProceedings - Design, Automation and Test in Europe, DATE 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1789-1794
Number of pages6
ISBN (Print)9783981537000
DOIs
StatePublished - 2013
Event16th Design, Automation and Test in Europe Conference and Exhibition, DATE 2013 - Grenoble, France
Duration: Mar 18 2013Mar 22 2013

Publication series

NameProceedings -Design, Automation and Test in Europe, DATE
ISSN (Print)1530-1591

Other

Other16th Design, Automation and Test in Europe Conference and Exhibition, DATE 2013
Country/TerritoryFrance
CityGrenoble
Period3/18/133/22/13

ASJC Scopus subject areas

  • General Engineering

Fingerprint

Dive into the research topics of 'A SPICE-compatible model of graphene nano-ribbon field-effect transistors enabling circuit-level delay and power analysis under process variation'. Together they form a unique fingerprint.

Cite this