TY - JOUR
T1 - A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage
AU - Mukhopadhyay, Deepkishore
AU - Dong, Jingyan
AU - Pengwang, Eakkachai
AU - Ferreira, Placid
N1 - Funding Information:
This material is based upon work supported by the National Science Foundation through the Center for Nanoscale Chemical Electrical and Mechanical Manufacturing Systems under Award Number DMI 0328162 and through Award Number grant DMI 0422687. Financial assistance was also obtained through Technology Research, Education and Commercialization Center, funded by the Office of Naval Research.
PY - 2008/9/15
Y1 - 2008/9/15
N2 - This paper presents the design, kinematic and dynamic analysis, fabrication and characterization of a monolithic micro/nanopositioning three degrees-of-freedom (DOF) (XYθ) stage. The design of the proposed MEMS (micro-electro-mechanical system) stage is based on a parallel-kinematic mechanism (PKM) scheme that allows for translation in the XY plane and rotation about the Z axis, an increased motion range, and linear kinematics in the operating region (or work area) of the stage. The truss-like structure of the PKM results in higher modal frequencies by increasing the structural stiffness and reducing the moving mass of the stage. The stage is fabricated on a silicon-on-insulator (SOI) wafer using surface micromachining and deep reactive ion etching (DRIE) processes. Three sets of electrostatic linear comb drives jointly actuate the mechanism to produce motion in the X, Y and θ (rotation) directions. The fabricated stage provides a motion range of 18 μm and 1.72° at a driving voltage of 85 V. The resonant frequency of the stage under ambient conditions is 465 Hz. Additionally a high Q factor (∼66) is achieved from this parallel-kinematics mechanism design.
AB - This paper presents the design, kinematic and dynamic analysis, fabrication and characterization of a monolithic micro/nanopositioning three degrees-of-freedom (DOF) (XYθ) stage. The design of the proposed MEMS (micro-electro-mechanical system) stage is based on a parallel-kinematic mechanism (PKM) scheme that allows for translation in the XY plane and rotation about the Z axis, an increased motion range, and linear kinematics in the operating region (or work area) of the stage. The truss-like structure of the PKM results in higher modal frequencies by increasing the structural stiffness and reducing the moving mass of the stage. The stage is fabricated on a silicon-on-insulator (SOI) wafer using surface micromachining and deep reactive ion etching (DRIE) processes. Three sets of electrostatic linear comb drives jointly actuate the mechanism to produce motion in the X, Y and θ (rotation) directions. The fabricated stage provides a motion range of 18 μm and 1.72° at a driving voltage of 85 V. The resonant frequency of the stage under ambient conditions is 465 Hz. Additionally a high Q factor (∼66) is achieved from this parallel-kinematics mechanism design.
KW - 3-DOF planar PKMs
KW - MEMS-XYθ stages
KW - Micro/nanopositioning stages
KW - SOI-MEMS
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U2 - 10.1016/j.sna.2008.04.018
DO - 10.1016/j.sna.2008.04.018
M3 - Article
AN - SCOPUS:47649124264
SN - 0924-4247
VL - 147
SP - 340
EP - 351
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
IS - 1
ER -