A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage

Deepkishore Mukhopadhyay, Jingyan Dong, Eakkachai Pengwang, Placid Ferreira

Research output: Contribution to journalArticlepeer-review


This paper presents the design, kinematic and dynamic analysis, fabrication and characterization of a monolithic micro/nanopositioning three degrees-of-freedom (DOF) (XYθ) stage. The design of the proposed MEMS (micro-electro-mechanical system) stage is based on a parallel-kinematic mechanism (PKM) scheme that allows for translation in the XY plane and rotation about the Z axis, an increased motion range, and linear kinematics in the operating region (or work area) of the stage. The truss-like structure of the PKM results in higher modal frequencies by increasing the structural stiffness and reducing the moving mass of the stage. The stage is fabricated on a silicon-on-insulator (SOI) wafer using surface micromachining and deep reactive ion etching (DRIE) processes. Three sets of electrostatic linear comb drives jointly actuate the mechanism to produce motion in the X, Y and θ (rotation) directions. The fabricated stage provides a motion range of 18 μm and 1.72° at a driving voltage of 85 V. The resonant frequency of the stage under ambient conditions is 465 Hz. Additionally a high Q factor (∼66) is achieved from this parallel-kinematics mechanism design.

Original languageEnglish (US)
Pages (from-to)340-351
Number of pages12
JournalSensors and Actuators, A: Physical
Issue number1
StatePublished - Sep 15 2008


  • 3-DOF planar PKMs
  • MEMS-XYθ stages
  • Micro/nanopositioning stages

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering


Dive into the research topics of 'A SOI-MEMS-based 3-DOF planar parallel-kinematics nanopositioning stage'. Together they form a unique fingerprint.

Cite this