A scanning tunneling microscopy study: Si/SiO 2 : Interface roughness induced by chemical etching

Jixin Yu, Lequn Liu, Joseph W Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Si/SiO 2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO 2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111 nm to 0.232nm by the normal NH 4 OH/H 2 O 2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO 2 /Si(100)) interface.

Original languageEnglish (US)
Title of host publicationScanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials
Pages44-49
Number of pages6
StatePublished - Dec 1 2004
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2004Dec 3 2004

Publication series

NameMaterials Research Society Symposium Proceedings
Volume838
ISSN (Print)0272-9172

Other

Other2004 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0412/3/04

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Yu, J., Liu, L., & Lyding, J. W. (2004). A scanning tunneling microscopy study: Si/SiO 2 : Interface roughness induced by chemical etching. In Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials (pp. 44-49). (Materials Research Society Symposium Proceedings; Vol. 838).