A scanning tunneling microscopy study

Si/SiO 2 : Interface roughness induced by chemical etching

Jixin Yu, Lequn Liu, Joseph W Lyding

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The Si/SiO 2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO 2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111 nm to 0.232nm by the normal NH 4 OH/H 2 O 2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO 2 /Si(100)) interface.

Original languageEnglish (US)
Title of host publicationScanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials
Pages44-49
Number of pages6
StatePublished - Dec 1 2004
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 28 2004Dec 3 2004

Publication series

NameMaterials Research Society Symposium Proceedings
Volume838
ISSN (Print)0272-9172

Other

Other2004 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0412/3/04

Fingerprint

Scanning tunneling microscopy
scanning tunneling microscopy
Etching
roughness
Surface roughness
etching
Ultrahigh vacuum
Topography
Degradation
ultrahigh vacuum
topography
degradation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Yu, J., Liu, L., & Lyding, J. W. (2004). A scanning tunneling microscopy study: Si/SiO 2 : Interface roughness induced by chemical etching. In Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials (pp. 44-49). (Materials Research Society Symposium Proceedings; Vol. 838).

A scanning tunneling microscopy study : Si/SiO 2 : Interface roughness induced by chemical etching. / Yu, Jixin; Liu, Lequn; Lyding, Joseph W.

Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials. 2004. p. 44-49 (Materials Research Society Symposium Proceedings; Vol. 838).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, J, Liu, L & Lyding, JW 2004, A scanning tunneling microscopy study: Si/SiO 2 : Interface roughness induced by chemical etching. in Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials. Materials Research Society Symposium Proceedings, vol. 838, pp. 44-49, 2004 MRS Fall Meeting, Boston, MA, United States, 11/28/04.
Yu J, Liu L, Lyding JW. A scanning tunneling microscopy study: Si/SiO 2 : Interface roughness induced by chemical etching. In Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials. 2004. p. 44-49. (Materials Research Society Symposium Proceedings).
Yu, Jixin ; Liu, Lequn ; Lyding, Joseph W. / A scanning tunneling microscopy study : Si/SiO 2 : Interface roughness induced by chemical etching. Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials. 2004. pp. 44-49 (Materials Research Society Symposium Proceedings).
@inproceedings{e5950bc8af14421e9a37c5ee4c8f23ad,
title = "A scanning tunneling microscopy study: Si/SiO 2 : Interface roughness induced by chemical etching",
abstract = "The Si/SiO 2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO 2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111 nm to 0.232nm by the normal NH 4 OH/H 2 O 2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO 2 /Si(100)) interface.",
author = "Jixin Yu and Lequn Liu and Lyding, {Joseph W}",
year = "2004",
month = "12",
day = "1",
language = "English (US)",
isbn = "1558997865",
series = "Materials Research Society Symposium Proceedings",
pages = "44--49",
booktitle = "Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials",

}

TY - GEN

T1 - A scanning tunneling microscopy study

T2 - Si/SiO 2 : Interface roughness induced by chemical etching

AU - Yu, Jixin

AU - Liu, Lequn

AU - Lyding, Joseph W

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The Si/SiO 2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO 2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111 nm to 0.232nm by the normal NH 4 OH/H 2 O 2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO 2 /Si(100)) interface.

AB - The Si/SiO 2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO 2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111 nm to 0.232nm by the normal NH 4 OH/H 2 O 2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO 2 /Si(100)) interface.

UR - http://www.scopus.com/inward/record.url?scp=34249907297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249907297&partnerID=8YFLogxK

M3 - Conference contribution

SN - 1558997865

SN - 9781558997868

T3 - Materials Research Society Symposium Proceedings

SP - 44

EP - 49

BT - Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials

ER -