@inproceedings{e5950bc8af14421e9a37c5ee4c8f23ad,
title = "A scanning tunneling microscopy study: Si/SiO2: Interface roughness induced by chemical etching",
abstract = "The Si/SiO2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111 nm to 0.232nm by the normal NH4OH/H2O2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO2/Si(100)) interface.",
author = "Jixin Yu and Lequn Liu and Lyding, {Joseph W.}",
year = "2004",
doi = "10.1557/proc-838-o4.9",
language = "English (US)",
isbn = "1558997865",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "44--49",
booktitle = "Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials",
note = "2004 MRS Fall Meeting ; Conference date: 28-11-2004 Through 03-12-2004",
}