@inproceedings{e5950bc8af14421e9a37c5ee4c8f23ad,
title = "A scanning tunneling microscopy study: Si/SiO 2 : Interface roughness induced by chemical etching",
abstract = " The Si/SiO 2 interface roughness has received tremendous interest due to its relation to channel mobility degradation and dielectric reliability. We have used ultra-high vacuum scanning tunneling microscopy to directly examine the Si/SiO 2 interface and study the roughening effect caused by chemical etching. The rms-roughness extracted quantitatively from the STM topography was found to be doubled from 0.111 nm to 0.232nm by the normal NH 4 OH/H 2 O 2 treatment, and further increased to 0.285nm for additional etching steps. It was also found that there were no regular single steps on the SiO 2 /Si(100)) interface.",
author = "Jixin Yu and Lequn Liu and Lyding, {Joseph W}",
year = "2004",
language = "English (US)",
isbn = "1558997865",
series = "Materials Research Society Symposium Proceedings",
pages = "44--49",
booktitle = "Scanning-Probe and Other Novel Microscopies of Local Phenomena in Nanostructured Materials",
note = "2004 MRS Fall Meeting ; Conference date: 28-11-2004 Through 03-12-2004",
}