A scalable SCR compact model for ESD circuit simulation

James P. Di Sarro, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

A scalable compact model for SCR-based electrostatic discharge (ESD) protection devices is presented. This model captures the effect that layout spacing has on SCR characteristics, such as holding voltage and trigger current. The model also captures both the delayed turn-on of the SCR, which results in large voltage overshoots during fast rise-time ESD events and the charge removal mechanisms that underlie the turn-off transient. Bias and time dependences of SCR on-resistance are captured with a resistance model that accounts for self-heating.

Original languageEnglish (US)
Article number5610716
Pages (from-to)3275-3286
Number of pages12
JournalIEEE Transactions on Electron Devices
Volume57
Issue number12
DOIs
StatePublished - Dec 1 2010

Fingerprint

Electrostatic discharge
Circuit simulation
Thyristors
Electric potential
Heating

Keywords

  • Compact modeling
  • electrostatic discharge (ESD)
  • silicon-controlled rectifier (SCR)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

A scalable SCR compact model for ESD circuit simulation. / Di Sarro, James P.; Rosenbaum, Elyse.

In: IEEE Transactions on Electron Devices, Vol. 57, No. 12, 5610716, 01.12.2010, p. 3275-3286.

Research output: Contribution to journalArticle

@article{c7858d45660645f1bd037017ea4942b1,
title = "A scalable SCR compact model for ESD circuit simulation",
abstract = "A scalable compact model for SCR-based electrostatic discharge (ESD) protection devices is presented. This model captures the effect that layout spacing has on SCR characteristics, such as holding voltage and trigger current. The model also captures both the delayed turn-on of the SCR, which results in large voltage overshoots during fast rise-time ESD events and the charge removal mechanisms that underlie the turn-off transient. Bias and time dependences of SCR on-resistance are captured with a resistance model that accounts for self-heating.",
keywords = "Compact modeling, electrostatic discharge (ESD), silicon-controlled rectifier (SCR)",
author = "{Di Sarro}, {James P.} and Elyse Rosenbaum",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/TED.2010.2081674",
language = "English (US)",
volume = "57",
pages = "3275--3286",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - A scalable SCR compact model for ESD circuit simulation

AU - Di Sarro, James P.

AU - Rosenbaum, Elyse

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A scalable compact model for SCR-based electrostatic discharge (ESD) protection devices is presented. This model captures the effect that layout spacing has on SCR characteristics, such as holding voltage and trigger current. The model also captures both the delayed turn-on of the SCR, which results in large voltage overshoots during fast rise-time ESD events and the charge removal mechanisms that underlie the turn-off transient. Bias and time dependences of SCR on-resistance are captured with a resistance model that accounts for self-heating.

AB - A scalable compact model for SCR-based electrostatic discharge (ESD) protection devices is presented. This model captures the effect that layout spacing has on SCR characteristics, such as holding voltage and trigger current. The model also captures both the delayed turn-on of the SCR, which results in large voltage overshoots during fast rise-time ESD events and the charge removal mechanisms that underlie the turn-off transient. Bias and time dependences of SCR on-resistance are captured with a resistance model that accounts for self-heating.

KW - Compact modeling

KW - electrostatic discharge (ESD)

KW - silicon-controlled rectifier (SCR)

UR - http://www.scopus.com/inward/record.url?scp=78650026633&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650026633&partnerID=8YFLogxK

U2 - 10.1109/TED.2010.2081674

DO - 10.1109/TED.2010.2081674

M3 - Article

AN - SCOPUS:78650026633

VL - 57

SP - 3275

EP - 3286

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

M1 - 5610716

ER -