TY - GEN
T1 - A scalable SCR compact model for ESD circuit simulation
AU - Di Sarro, James
AU - Rosenbaum, Elyse
PY - 2008
Y1 - 2008
N2 - A scalable, compact model for SCR-based ESD-protection devices, which can simulate transient voltage overshoots observed on the timescale of charged device model (CDM) events, is presented. This model captures the effect that layout spacings have on SCR characteristics such as holding voltage and trigger current. Bias and time dependencies of SCR on-resistance are captured with a resistance model that accounts for self-heating and velocity saturation.
AB - A scalable, compact model for SCR-based ESD-protection devices, which can simulate transient voltage overshoots observed on the timescale of charged device model (CDM) events, is presented. This model captures the effect that layout spacings have on SCR characteristics such as holding voltage and trigger current. Bias and time dependencies of SCR on-resistance are captured with a resistance model that accounts for self-heating and velocity saturation.
KW - Compact modeling
KW - Electrostatic discharge (ESD)
KW - Silicon controller rectifier (SCR)
UR - http://www.scopus.com/inward/record.url?scp=51549115717&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51549115717&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2008.4558895
DO - 10.1109/RELPHY.2008.4558895
M3 - Conference contribution
AN - SCOPUS:51549115717
SN - 9781424420506
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 254
EP - 261
BT - 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
T2 - 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Y2 - 27 April 2008 through 1 May 2008
ER -