TY - JOUR
T1 - A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth
AU - Greene, J. E.
AU - Motooka, T.
AU - Sundgren, J. E.
AU - Rockett, A.
AU - Gorbatkin, S.
AU - Lubben, D.
AU - Barnett, S. A.
N1 - Funding Information:
The authors gratefully acknowledge the financial support of the Joint Services Electronics Program under contract number N00014-84-C-0149, the Materials Science Division of the Department of Energy under contract number DE-ACO2-76ER01198, the Semiconductor Research Corporation, and the Office of Naval Research under contract number N00014-81-K-0568 in sponsoring various phases of this work.
PY - 1986/12/2
Y1 - 1986/12/2
N2 - Recent progress in the use of low-energy ({less-than or approximate}200 eV) ion/surface interactions and photo-induced reactions during vapor-phase crystal growth in order to provide better control over film growth kinetics and hence the microstructure, microchemistry, and physical properties of as-deposited layers is reviewed. Ion/surface interaction effects such as trapping, preferential sputtering, and collisional mixing are used to interpret and, in some cases, model experimental results concerning the effects of low-energy ion bombardment on nucleation and film growth kinetics, elemental incorporation probabilities, surface segregation rates, dopant depth distributions, and film microstructure. The role of photo-stimulated gas-phase and surface reactions during laser-assisted chemical vapor deposition including single, multiple, and multi-photon-initiated-processes, radical production,and adlayer photochemistry are also discussed together with newly developed laser-processing techniques during deposition. The focus of this review is on the development of an understanding of the controlling mechanisms in both ion/surface and photo-stimulated processes in order to more fully utilize the advantages inherent in these techniques.
AB - Recent progress in the use of low-energy ({less-than or approximate}200 eV) ion/surface interactions and photo-induced reactions during vapor-phase crystal growth in order to provide better control over film growth kinetics and hence the microstructure, microchemistry, and physical properties of as-deposited layers is reviewed. Ion/surface interaction effects such as trapping, preferential sputtering, and collisional mixing are used to interpret and, in some cases, model experimental results concerning the effects of low-energy ion bombardment on nucleation and film growth kinetics, elemental incorporation probabilities, surface segregation rates, dopant depth distributions, and film microstructure. The role of photo-stimulated gas-phase and surface reactions during laser-assisted chemical vapor deposition including single, multiple, and multi-photon-initiated-processes, radical production,and adlayer photochemistry are also discussed together with newly developed laser-processing techniques during deposition. The focus of this review is on the development of an understanding of the controlling mechanisms in both ion/surface and photo-stimulated processes in order to more fully utilize the advantages inherent in these techniques.
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U2 - 10.1016/0022-0248(86)90411-2
DO - 10.1016/0022-0248(86)90411-2
M3 - Article
AN - SCOPUS:0040284593
SN - 0022-0248
VL - 79
SP - 19
EP - 32
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-3
ER -