A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth

J. E. Greene, T. Motooka, J. E. Sundgren, A. Rockett, S. Gorbatkin, D. Lubben, S. A. Barnett

Research output: Contribution to journalArticlepeer-review

Abstract

Recent progress in the use of low-energy ({less-than or approximate}200 eV) ion/surface interactions and photo-induced reactions during vapor-phase crystal growth in order to provide better control over film growth kinetics and hence the microstructure, microchemistry, and physical properties of as-deposited layers is reviewed. Ion/surface interaction effects such as trapping, preferential sputtering, and collisional mixing are used to interpret and, in some cases, model experimental results concerning the effects of low-energy ion bombardment on nucleation and film growth kinetics, elemental incorporation probabilities, surface segregation rates, dopant depth distributions, and film microstructure. The role of photo-stimulated gas-phase and surface reactions during laser-assisted chemical vapor deposition including single, multiple, and multi-photon-initiated-processes, radical production,and adlayer photochemistry are also discussed together with newly developed laser-processing techniques during deposition. The focus of this review is on the development of an understanding of the controlling mechanisms in both ion/surface and photo-stimulated processes in order to more fully utilize the advantages inherent in these techniques.

Original languageEnglish (US)
Pages (from-to)19-32
Number of pages14
JournalJournal of Crystal Growth
Volume79
Issue number1-3
DOIs
StatePublished - Dec 2 1986

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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