A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs

G. Chen, V. Kumar, R. Schwindt, I. Adesida

Research output: Contribution to journalConference article

Abstract

A reliable low gate bias model extraction procedure for AlGaN/GaN is discussed. This method does not bias the device at a untenable high gate voltage in order to extract the parasitic inductance and resistance. The modeling procedure is reliable and simple with high accuracy up to 40GHz. The influence of extracted parasitic components is discussed.

Original languageEnglish (US)
Article number4015111
Pages (from-to)1097-1100
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States
Duration: Jun 11 2006Jun 16 2006

Fingerprint

High electron mobility transistors
high electron mobility transistors
Inductance
Electric potential
inductance
electric potential

Keywords

  • Equivalent circuits
  • HEMT
  • Microwave devices

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

A reliable low gate bias model extraction procedure for AlGaN/GaN HEMTs. / Chen, G.; Kumar, V.; Schwindt, R.; Adesida, I.

In: IEEE MTT-S International Microwave Symposium Digest, 01.12.2006, p. 1097-1100.

Research output: Contribution to journalConference article

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