@inproceedings{e856c2f5dea8484498d7bd3d44ea7561,
title = "A poly-Si gate carbon nanotube field effect transistor for high frequency applications",
abstract = "We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3μm and achieves a unity gain frequency f T of 2.5GHz and a maximum oscillation frequency f max of >5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.",
keywords = "Carbon nanotube, Field effect transistor, Nanotechnology, Poly-silicon",
author = "Sunkook Kim and Choi, {Tae Young} and Laleh Rabieirad and Jeon, {Jong Hyeok} and Moonsub Shim and Saeed Mohammadi",
year = "2005",
doi = "10.1109/MWSYM.2005.1516586",
language = "English (US)",
isbn = "0780388461",
series = "IEEE MTT-S International Microwave Symposium Digest",
pages = "303--306",
booktitle = "2005 IEEE MTT-S International Microwave Symposium Digest",
note = "2005 IEEE MTT-S International Microwave Symposium ; Conference date: 12-06-2005 Through 17-06-2005",
}