A poly-Si gate carbon nanotube field effect transistor for high frequency applications

Sunkook Kim, Tae Young Choi, Laleh Rabieirad, Jong Hyeok Jeon, Moonsub Shim, Saeed Mohammadi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We are reporting a novel carbon nanotube field effect transistor with a poly-Si bottom gate structure. The device has a gate length of 3μm and achieves a unity gain frequency f T of 2.5GHz and a maximum oscillation frequency f max of >5GHz. The high frequency performance of the device is attributed to the ballistic transport of electrons inside the nanotube and is expected to improve by reducing the gate length.

Original languageEnglish (US)
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Pages303-306
Number of pages4
DOIs
StatePublished - Dec 1 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: Jun 12 2005Jun 17 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2005
ISSN (Print)0149-645X

Other

Other2005 IEEE MTT-S International Microwave Symposium
CountryUnited States
CityLong Beach, CA
Period6/12/056/17/05

Keywords

  • Carbon nanotube
  • Field effect transistor
  • Nanotechnology
  • Poly-silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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