A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs - Part I: Effect of Contacts, Temperature, Ambipolarity, and Traps

Elahe Yarmoghaddam, Nazila Haratipour, Steven J. Koester, Shaloo Rakheja

Research output: Contribution to journalArticle


We report a physics-based surface-potential compact model to describe current-voltage (I-V) relationship in a few-layered ambipolar black phosphorus (BP) transistors. To model the device electrostatics, the 2-D density of states of carriers and Fermi-Dirac statistics are used, while carrier transport is described using the drift-diffusion formalism. The model also comprehends the effects of interface traps and voltage-dependent Schottky-type source/drain contact resistances. Compared with prior BP FET models that are mainly suited for near-equilibrium transport and room-temperature operation, the model developed here is applicable over broad bias and temperature range. Validation of the model against measurement data of BP transistors with gate lengths 300-1000 nm and operating temperature from 200-298 K is demonstrated in a companion article.

Original languageEnglish (US)
Article number8920102
Pages (from-to)389-396
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number1
StatePublished - Jan 2020



  • Ambipolar transport
  • black phosphorus (BP)
  • compact model
  • experimental validation
  • Schottky barrier (SB)
  • surface potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this