Abstract
A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.
| Original language | English (US) |
|---|---|
| Title of host publication | 2013 IEEE International Reliability Physics Symposium, IRPS 2013 |
| DOIs | |
| State | Published - Aug 7 2013 |
| Event | 2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States Duration: Apr 14 2013 → Apr 18 2013 |
Publication series
| Name | IEEE International Reliability Physics Symposium Proceedings |
|---|---|
| ISSN (Print) | 1541-7026 |
Other
| Other | 2013 IEEE International Reliability Physics Symposium, IRPS 2013 |
|---|---|
| Country | United States |
| City | Monterey, CA |
| Period | 4/14/13 → 4/18/13 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
A physics-based compact model for SCR devices used in ESD protection circuits. / Mertens, Robert; Rosenbaum, Elyse.
2013 IEEE International Reliability Physics Symposium, IRPS 2013. 2013. 6531947 (IEEE International Reliability Physics Symposium Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - A physics-based compact model for SCR devices used in ESD protection circuits
AU - Mertens, Robert
AU - Rosenbaum, Elyse
PY - 2013/8/7
Y1 - 2013/8/7
N2 - A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.
AB - A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.
UR - http://www.scopus.com/inward/record.url?scp=84880973963&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880973963&partnerID=8YFLogxK
U2 - 10.1109/IRPS.2013.6531947
DO - 10.1109/IRPS.2013.6531947
M3 - Conference contribution
AN - SCOPUS:84880973963
SN - 9781479901135
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
ER -