TY - GEN
T1 - A physics-based compact model for SCR devices used in ESD protection circuits
AU - Mertens, Robert
AU - Rosenbaum, Elyse
PY - 2013
Y1 - 2013
N2 - A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.
AB - A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.
UR - http://www.scopus.com/inward/record.url?scp=84880973963&partnerID=8YFLogxK
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U2 - 10.1109/IRPS.2013.6531947
DO - 10.1109/IRPS.2013.6531947
M3 - Conference contribution
AN - SCOPUS:84880973963
SN - 9781479901135
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 2B.2.1-2B.2.7
BT - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
T2 - 2013 IEEE International Reliability Physics Symposium, IRPS 2013
Y2 - 14 April 2013 through 18 April 2013
ER -