A physics-based compact model for SCR devices used in ESD protection circuits

Robert Mertens; Elyse Rosenbaum

doi:10.1109/IRPS.2013.6531947

A physics-based compact model for SCR devices used in ESD protection circuits

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.

Original language	English (US)
Title of host publication	2013 IEEE International Reliability Physics Symposium, IRPS 2013
DOIs	https://doi.org/10.1109/IRPS.2013.6531947
State	Published - Aug 7 2013
Event	2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States Duration: Apr 14 2013 → Apr 18 2013

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	2013 IEEE International Reliability Physics Symposium, IRPS 2013
Country	United States
City	Monterey, CA
Period	4/14/13 → 4/18/13

Fingerprint

ASJC Scopus subject areas

Engineering(all)

Cite this

Mertens, R., & Rosenbaum, E. (2013). A physics-based compact model for SCR devices used in ESD protection circuits. In 2013 IEEE International Reliability Physics Symposium, IRPS 2013 [6531947] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2013.6531947

Mertens, R & Rosenbaum, E 2013, A physics-based compact model for SCR devices used in ESD protection circuits. in 2013 IEEE International Reliability Physics Symposium, IRPS 2013., 6531947, IEEE International Reliability Physics Symposium Proceedings, 2013 IEEE International Reliability Physics Symposium, IRPS 2013, Monterey, CA, United States, 4/14/13. https://doi.org/10.1109/IRPS.2013.6531947

@inproceedings{e6c3f0578be44b179ca1836c393af493,

title = "A physics-based compact model for SCR devices used in ESD protection circuits",

abstract = "A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.",

author = "Robert Mertens and Elyse Rosenbaum",

year = "2013",

month = aug,

day = "7",

doi = "10.1109/IRPS.2013.6531947",

language = "English (US)",

isbn = "9781479901135",

series = "IEEE International Reliability Physics Symposium Proceedings",

booktitle = "2013 IEEE International Reliability Physics Symposium, IRPS 2013",

note = "2013 IEEE International Reliability Physics Symposium, IRPS 2013 ; Conference date: 14-04-2013 Through 18-04-2013",

}

TY - GEN

T1 - A physics-based compact model for SCR devices used in ESD protection circuits

AU - Mertens, Robert

AU - Rosenbaum, Elyse

PY - 2013/8/7

Y1 - 2013/8/7

N2 - A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.

AB - A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.

UR - http://www.scopus.com/inward/record.url?scp=84880973963&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880973963&partnerID=8YFLogxK

U2 - 10.1109/IRPS.2013.6531947

DO - 10.1109/IRPS.2013.6531947

M3 - Conference contribution

AN - SCOPUS:84880973963

SN - 9781479901135

T3 - IEEE International Reliability Physics Symposium Proceedings

BT - 2013 IEEE International Reliability Physics Symposium, IRPS 2013

T2 - 2013 IEEE International Reliability Physics Symposium, IRPS 2013

Y2 - 14 April 2013 through 18 April 2013

ER -

Access to Document

10.1109/IRPS.2013.6531947