A physics-based compact model for SCR devices used in ESD protection circuits

Robert Mertens, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A CMOS SCR compact model is developed for circuit simulation of ESD protection circuits. The model is comprised of coupled NPN and PNP transistors. A previously unnoted interaction between these transistors is described, resulting in improved agreement between simulation and measurement. This model addresses fundamental limitations of previous models, allowing for improved simulation accuracy, while limiting the number of parameters. The model parameters are scalable with respect to the layout spacings.

Original languageEnglish (US)
Title of host publication2013 IEEE International Reliability Physics Symposium, IRPS 2013
DOIs
StatePublished - Aug 7 2013
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: Apr 14 2013Apr 18 2013

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2013 IEEE International Reliability Physics Symposium, IRPS 2013
CountryUnited States
CityMonterey, CA
Period4/14/134/18/13

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Mertens, R., & Rosenbaum, E. (2013). A physics-based compact model for SCR devices used in ESD protection circuits. In 2013 IEEE International Reliability Physics Symposium, IRPS 2013 [6531947] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2013.6531947