A photon detector with very high gain at low bias and at room temperature

Omer Gokalp Memis; Alex Katsnelson; Soon Cheol Kong; Hooman Mohseni; Minjun Yan; Shuang Zhang; Tim Hossain; Niu Jin; Ilesanmi Adesida

doi:10.1063/1.2802043

A photon detector with very high gain at low bias and at room temperature

Omer Gokalp Memis, Alex Katsnelson, Soon Cheol Kong, Hooman Mohseni, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

We report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ∼1 V at 1.55 μm at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA cm2. The noise equivalent power (NEP) is measured to be 4 fW Hz0.5 at room temperature without any gating, which is similar to NEP of current InGaAsInP avalanche photodetectors in gated operation.

Original language	English (US)
Article number	171112
Journal	Applied Physics Letters
Volume	91
Issue number	17
DOIs	https://doi.org/10.1063/1.2802043
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2802043

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@article{51825d76b5d0414dae3ddb53c58d8bde,

title = "A photon detector with very high gain at low bias and at room temperature",

abstract = "We report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ∼1 V at 1.55 μm at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA cm2. The noise equivalent power (NEP) is measured to be 4 fW Hz0.5 at room temperature without any gating, which is similar to NEP of current InGaAsInP avalanche photodetectors in gated operation.",

author = "Memis, {Omer Gokalp} and Alex Katsnelson and Kong, {Soon Cheol} and Hooman Mohseni and Minjun Yan and Shuang Zhang and Tim Hossain and Niu Jin and Ilesanmi Adesida",

note = "Funding Information: This work is partly supported by National Science Foundation CAREER award and Defense Advanced Research Projects Agency Award No. HR0011-05-1-0058.",

year = "2007",

doi = "10.1063/1.2802043",

language = "English (US)",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - A photon detector with very high gain at low bias and at room temperature

AU - Memis, Omer Gokalp

AU - Katsnelson, Alex

AU - Kong, Soon Cheol

AU - Mohseni, Hooman

AU - Yan, Minjun

AU - Zhang, Shuang

AU - Hossain, Tim

AU - Jin, Niu

AU - Adesida, Ilesanmi

N1 - Funding Information: This work is partly supported by National Science Foundation CAREER award and Defense Advanced Research Projects Agency Award No. HR0011-05-1-0058.

PY - 2007

Y1 - 2007

N2 - We report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ∼1 V at 1.55 μm at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA cm2. The noise equivalent power (NEP) is measured to be 4 fW Hz0.5 at room temperature without any gating, which is similar to NEP of current InGaAsInP avalanche photodetectors in gated operation.

AB - We report on a photon detector aimed at low light detection, which is based on the combination of small sensing volumes and large absorbing regions. Fabricated devices show stable gain values in the range of 1000-10 000 at bias voltages of ∼1 V at 1.55 μm at room temperature. Submicron devices show dark current less than 90 nA and unity gain dark current density values less than 900 nA cm2. The noise equivalent power (NEP) is measured to be 4 fW Hz0.5 at room temperature without any gating, which is similar to NEP of current InGaAsInP avalanche photodetectors in gated operation.

UR - http://www.scopus.com/inward/record.url?scp=35548992771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35548992771&partnerID=8YFLogxK

U2 - 10.1063/1.2802043

DO - 10.1063/1.2802043

M3 - Article

AN - SCOPUS:35548992771

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171112

ER -

A photon detector with very high gain at low bias and at room temperature

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