A passive 461 MHz AlN-CMOS RF front-end for event-driven wakeup receivers

Pouyan Bassirian, Jesse Moody, Anming Gao, Tomas Manzaneque, Benton H. Calhoun, N. Scott Barker, Songbin Gong, Steven M. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a fully passive front-end operating at 461 MHz, as a building block for implementation of wakeup receivers in sensor networks. We use an Aluminum Nitride (AlN) microelectromechanical system (MEMS) resonator for impedance transformation in order to achieve passive voltage boost at the input of a quadratic envelope detector, fabricated in a 130nm CMOS process. Each individual block is co-designed to maximize overall voltage gain so that the resulting dc output can be detected by ultra-low power (ULP) digital circuitry. Integration of these two technologies results in the reduction of node size and achieves superior performance at higher frequencies.

Original languageEnglish (US)
Title of host publicationIEEE SENSORS 2017 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781509010127
DOIs
StatePublished - Dec 21 2017
Event16th IEEE SENSORS Conference, ICSENS 2017 - Glasgow, United Kingdom
Duration: Oct 30 2017Nov 1 2017

Publication series

NameProceedings of IEEE Sensors
Volume2017-December
ISSN (Print)1930-0395
ISSN (Electronic)2168-9229

Other

Other16th IEEE SENSORS Conference, ICSENS 2017
CountryUnited Kingdom
CityGlasgow
Period10/30/1711/1/17

Keywords

  • CMOS integrated circuit
  • microelectromechanical systems
  • wireless sensor networks

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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