A novel tool for mapping composition distributions in semiconductor microstructures - Application to InxGa1-xP quantum wires

P. Dua; S. L. Cooper; K. Y. Cheng

doi:10.1063/1.120968

A novel tool for mapping composition distributions in semiconductor microstructures - Application to In_xGa_1-xP quantum wires

P. Dua, S. L. Cooper, K. Y. Cheng

Research output: Contribution to journal › Review article › peer-review

Abstract

A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (∼150Å) In_xGa_1-xP multiquantum wire array grown via a strain-induced laterally ordered process.

Original language	English (US)
Pages (from-to)	1072-1074
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	9
DOIs	https://doi.org/10.1063/1.120968
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120968

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Cite this

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title = "A novel tool for mapping composition distributions in semiconductor microstructures - Application to InxGa1-xP quantum wires",

abstract = "A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (∼150{\AA}) InxGa1-xP multiquantum wire array grown via a strain-induced laterally ordered process.",

author = "P. Dua and Cooper, {S. L.} and Cheng, {K. Y.}",

year = "1998",

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AU - Cooper, S. L.

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N2 - A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (∼150Å) InxGa1-xP multiquantum wire array grown via a strain-induced laterally ordered process.

AB - A technique is described which employs resonant Raman scattering for nondestructive, quantitative analysis of alloy composition distributions and their volume fractions in semiconductor microstructures. Use of this technique is demonstrated via application to extract the wire and barrier region compositions and the shape of the composition modulation profile of narrow (∼150Å) InxGa1-xP multiquantum wire array grown via a strain-induced laterally ordered process.

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