@inproceedings{bbcdf47859694311a4e53fbc1a5a2013,
title = "A novel TCAD-based methodology to minimize the impact of parasitic structures on ESD performance",
abstract = "During an ESD event, breakdown of a parasitic bipolar transistor can lead to chip failure. For a variety of ESD protection networks, it is demonstrated that TCAD simulations correctly predict the stress level at which failure occurs due to bipolar breakdown. A procedure to characterize the interaction between any two N-type diffusions and the ESD cells to which they are connected is presented.",
keywords = "ESD, Electrostatic discharge, Parasitic bipolar, TCAD",
author = "Nicholas Olson and Gianluca Boselli and Akram Salman and Elyse Rosenbaum",
year = "2010",
doi = "10.1109/IRPS.2010.5488784",
language = "English (US)",
isbn = "9781424454310",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "474--479",
booktitle = "2010 IEEE International Reliability Physics Symposium, IRPS 2010",
note = "2010 IEEE International Reliability Physics Symposium, IRPS 2010 ; Conference date: 02-05-2010 Through 06-05-2010",
}