Abstract
Modeling the circuit behavior of electrostatic discharge (ESD) protection devices under typical ESD stress transients is critical to understanding ESD protection circuit behavior. We present a novel macromodel which greatly reduces the time and effort required to develop circuit simulation models of SCR (silicon controlled rectifier) structures. Simulation results using the SCR macromodel to model LVTSCR behavior under both the HBM and CDM stress are presented.
Original language | English (US) |
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Pages (from-to) | 319-322 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
State | Published - 2001 |
Event | IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: Dec 2 2001 → Dec 5 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry