A novel SCR macromodel for ESD circuit simulation

Patrick A. Juliano, Elyse Rosenbaum

Research output: Contribution to journalConference articlepeer-review

Abstract

Modeling the circuit behavior of electrostatic discharge (ESD) protection devices under typical ESD stress transients is critical to understanding ESD protection circuit behavior. We present a novel macromodel which greatly reduces the time and effort required to develop circuit simulation models of SCR (silicon controlled rectifier) structures. Simulation results using the SCR macromodel to model LVTSCR behavior under both the HBM and CDM stress are presented.

Original languageEnglish (US)
Pages (from-to)319-322
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - Dec 1 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: Dec 2 2001Dec 5 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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