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A new buffer layer for MOCVD growth of GaN on sapphire
X. Li
, D. V. Forbes
, S. Q. Gu
, D. A. Turnbull
, S. G. Bishop
, J. J. Coleman
Electrical and Computer Engineering
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peer-review
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Dive into the research topics of 'A new buffer layer for MOCVD growth of GaN on sapphire'. Together they form a unique fingerprint.
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Buffer Layer
100%
Chemical Vapor Deposition Growth
100%
GaN-on-sapphire
100%
GaN Films
50%
Mirror-like
50%
Scanning Electron Microscopy
25%
High Density
25%
Diffraction
25%
Photoluminescence
25%
Measure Data
25%
Atmospheric Pressure
25%
Sapphire Substrate
25%
Reactor Configuration
25%
GaN Buffer
25%
C-face
25%
Van Der Pauw
25%
Configuration Parameters
25%
Hall Measurement
25%
Hexagonal pit
25%
Growth Parameters
25%
Double Buffer Layer
25%
Optimized Thickness
25%
Material Science
Chemical Vapor Deposition
100%
Buffer Layer
100%
Sapphire
100%
Film
66%
Density
16%
Scanning Electron Microscopy
16%
Photoluminescence
16%
Engineering
Chemical Vapor Deposition
100%
Vapor Deposition
100%
Buffer Layer
100%
Ray Diffraction
16%
Measurement Data
16%
Sapphire Substrate
16%
Growth Parameter
16%
Atmospheric Pressure
16%