A new buffer layer for MOCVD growth of GaN on sapphire

X. Li, D. V. Forbes, S. Q. Gu, D. A. Turnbull, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalArticle

Abstract

High quality GaN films have been grown on sapphire substrates (C face and A face) by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) using a new buffer layer. With our reactor configuration and growth parameters, a GaN film grown on a single GaN buffer layer appears opaque with high density of hexagonal pits. Using a single A1N buffer layer results in extremely nonuniform morphology with mirror-like areas near the edge of the substrates and opaque areas in the center. The double buffer layer we report here, with GaN as the first layer and A1N as the second, each with an optimized thickness, leads to mirror-like films across the entire substrate. Scanning electron microscopy, photoluminescence, x-ray diffraction, and van der Pauw geometry Hall measurement data are presented to establish the quality of our films. The mechanism for this new buffer layer is also discussed.

Original languageEnglish (US)
Pages (from-to)1711-1714
Number of pages4
JournalJournal of Electronic Materials
Volume24
Issue number11
DOIs
StatePublished - Nov 1 1995

Keywords

  • A1N buffer layer
  • double buffer layer
  • GaN
  • GaN buffer layer
  • metalorganic chemical vapor deposition (MOCVD)
  • sapphire substrates

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Electrical and Electronic Engineering

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    Li, X., Forbes, D. V., Gu, S. Q., Turnbull, D. A., Bishop, S. G., & Coleman, J. J. (1995). A new buffer layer for MOCVD growth of GaN on sapphire. Journal of Electronic Materials, 24(11), 1711-1714. https://doi.org/10.1007/BF02676838